Datasheet > GAN3R2-100CBE

GAN3R2-100CBE

更新时间： 2024-11-14 11:15:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	294K
描述
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)Production

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GAN3R2-100CBE 数据手册

GAN3R2-100CBE

100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a

3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP)

27 April 2023

Product data sheet

1. General description

The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15

bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering

superior performance.

2. Features and benefits

•

Enhancement mode - normally-off power switch

•

Ultra high frequency switching capability

No body diode

Low gate charge, low output charge

Qualified for standard applications

ESD protection

RoHS, Pb-free, REACH-compliant

High efficiency and high power density

Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm

3. Applications

•

High power density and high efficiency power conversion

AC-to-DC converters, (secondary stage)

High frequency DC-to-DC converters in 48 V systems

Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

Datacom and telecom (AC-to-DC and DC-to-DC) converters

Motor drives

LiDAR (non-automotive)

Class D audio amplifiers

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

100

130

Unit

drain-source voltage

V_TDS

transient drain to

source voltage

pulsed; t_p= 1 µs; δ_factor= 0.01

V_GS= 5 V

I_D

drain current

[1]

P_tot

T_j

total power dissipation Fig. 1

junction temperature

394

150

°C

-40

Static characteristics

R_DSondrain-source on-state

V_GS= 5 V; I_D= 25 A; T_j= 25 °C; Fig. 9;

Fig. 10; Fig. 11; Fig. 12

2.4

2.2

3.2

mΩ

resistance

R_G

gate resistance

f = 5 MHz; T_j= 25 °C

12 3 4 5 6 7...13

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