Datasheet > GAN7R0-150LBE

GAN7R0-150LBE

更新时间： 2024-09-26 11:13:47

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	270K
描述
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) packageProduction

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GAN7R0-150LBE 数据手册

GAN7R0-150LBE

150 V, 7 mOhm Gallium Nitride (GaN) FET in a

2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package

24 April 2023

Product data sheet

1. General description

The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid

Array (LGA) package. It is a normally-off e-mode device offering superior performance.

2. Features and benefits

•

Enhancement mode - normally-off power switch

•

Ultra high frequency switching capability

No body diode

Low gate charge, low output charge

Qualified for standard applications

ESD protection

RoHS, Pb-free, REACH-compliant

High efficiency and high power density

Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm

3. Applications

•

High power density and high efficiency power conversion

AC-to-DC converters, (secondary stage)

High frequency DC-to-DC converters in 48 V systems

400 V to 48 V LLC converters, secondary (rectification) side

Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

Datacom and telecom (AC-to-DC and DC-to-DC) converters

Motor drives

LiDAR (non-automotive)

Class D audio amplifiers

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

150

170

Unit

drain-source voltage

V_TDS

transient drain to

source voltage

pulsed; t_p= 1 µs; δ_factor= 0.01

V_GS= 5 V

I_D

drain current

[1]

P_tot

T_j

total power dissipation Fig. 1

junction temperature

°C

-40

150

Static characteristics

R_DSondrain-source on-state

V_GS= 5 V; I_D= 10 A; T_j= 25 °C; Fig. 9;

Fig. 10; Fig. 11; Fig. 12

5.6

2.3

mΩ

resistance

R_G

gate resistance

f = 5 MHz; T_j= 25 °C

12 3 4 5 6 7...13

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