Datasheet > GAP3SLT33-214_18

GAP3SLT33-214_18

更新时间： 2024-11-14 01:21:51

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
6页	685K
描述
Silicon Carbide Schottky Diode

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GAP3SLT33-214_18 数据手册

GAPꢀSLTꢀꢀ-ꢁꢂꢃ

3300 V SiC MPS™ Diode

V_RRM

I_{F (Tc}

3300 V

0.3 A

3 nC

Silicon Carbide Schottky Diode

≤

125°C)

Q_C

Features

Package

• High Avalanche (UIS) Capability

• Enhanced Surge Current Capability

• Superior Figure of Merit Q_C/I_F

• Low Thermal Resistance

• 175 °C Maximum Operating Temperature

• Temperature Independent Switching Behavior

• Positive Temperature Coefficient of V_F

•

Extremely Fast Switching Speeds

DO-214

Advantages

Applications

• Low Standby Power Losses

• Improved Circuit Efficiency (Lower Overall Cost)

• Low Switching Losses

• High Voltage Sensing

• Power Supplies

• Down-Hole Oil Drilling

• Ease of Paralleling without Thermal Runaway

• Smaller Heat Sink Requirements

• Low Reverse Recovery Current

• Low Device Capacitance

• Geothermal Instrumentation

High Voltage Multipliers

•

Low Reverse Leakage Current

Absolute Maximum Ratings (At T_C= 25 °C Unless Otherwise Stated)

Parameter

Symbol

V_RRM

I_F

Conditions

Values

Unit

Repetitive Peak Reverse Voltage

Continuous Forward Current

3300

0.3

T_C≤ 125 °C, D = 1

T_C= 25 °C, t_P= 10 ms

T_C= 150 °C, t_P= 10 ms

T_C= 25 °C, t_P= 10 ms

T_C= 150 °C, t_P= 10 ms

Non-Repetitive Peak Forward Surge

Current, Half Sine Wave

I_F,SM

1.4

Repetitive Peak Forward Surge Current,

Half Sine Wave

I_F,RM

Non-Repetitive Peak Forward Surge

Current

I_F,max

T_C= 25 °C, t_P= 10 µs

i²t Value

∫i²dt

dV/dt

P_tot

T_C= 25 °C, t_P= 10 ms

V_R= 0 ~ 960 V

T_C= 25 °C

0.02

100

A²s

V/ns

Diode Ruggedness

Power Dissipation

105

Operating and Storage Temperature

T_j, T_stg

-55 to 175

°C

Sep 2018 Rev1.1

www.genesicsemi.com/schottky_mps/GAP3SLT33-214.pdf

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