Datasheet > GAN65R240ZT2

GAN65R240ZT2

更新时间： 2024-09-26 17:01:31

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	489K
描述
650V, N Channel, GaN HEMT

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中文翻译

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数据手册

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GAN65R240ZT2 数据手册

GaN Enhancement-modePower MOSFET

GAN65R240ZT2

Features



Enhancement mode transistor-Normally off power switch

Simple gate drive 0 V to 6 V

High switching frequency (> 1 MHz)

Reverse conduction capability

Zero reverse recovery loss

Kelvin Source for optimized gate drive

APPLICATIONS



PD chargers

Power Adapters

Power Factor Correction (PFC)

Appliance Motor Drive

Industrial Power Supplies

Mechanical Data



Case: DFN8080-8L

Molding Compound: UL Flammability Classification Rating 94V-0

DFN8080-8L

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

GAN65R240ZT2

DFN8080-8L

4000 pcs / Tape & Reel

GAN65R240

Maximum Ratings (@ T_C= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_{DSS(transient)}

V_GSS

650

750

Drain-to-Source Voltage – transient, t_p≤ 100μs

Gate-to-Source Voltage

-10 ~ +7

-20 ~ +10

Gate-to-Source Voltage – transient, t_p≤ 100μs

Continuous Drain Current (T_C= 25°C )

Pulsed Drain Current (t_p=10μs, T_C= 25°C )

Pulsed Drain Current (t_p=10μs, T_C= 150°C )

Power Dissipation (T_C= 25°C)

V_{GSS(transient)}

I_D

I_DM

7.5

P_D

T_J

°C

Operating Junction Temperature Range

Storage Temperature Range

-55 ~ +150

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Case

Thermal Resistance Junction-to-Air ^*1

R_θJC

R_θJA

1.6

°C /W

MTM1532A: January 2024 [2.0]

www.gmesemi.com

12 3 4 5 6

中文翻译

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