Datasheet > GAN190-650FBE

GAN190-650FBE

更新时间： 2024-11-14 11:11:39

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	313K
描述
650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN 5 mm x 6 mm packageProduction

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GAN190-650FBE 数据手册

GAN190-650FBE

650 V, 190 mOhm Gallium Nitride (GaN) FET in a DFN

5 mm x 6 mm package

19 April 2023

Product data sheet

1. General description

The GAN190-650FBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a

DFN 5 mm x 6 mm surface mount package. It is a normally-off e-mode device offering superior

performance.

2. Features and benefits

•

Enhancement mode - normally-off power switch

•

Ultra high frequency switching capability

No body diode

Low gate charge, low output charge

Qualified for standard applications

ESD protection

RoHS, Pb-free, REACH-compliant

High efficiency and high power density

Low package inductance and low package resistance

3. Applications

•

High power density and high efficiency power conversion

AC-to-DC converters, totem pole PFC

DC-to-DC converters

Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers

Datacom and telecom (AC-to-DC and DC-to-DC) converters

Motor drives

Solar (PV) inverters

Class D audio amplifiers, TV PSU and LED drivers

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

650

800

Unit

drain-source voltage

-55 °C ≤ T_j≤ 150 °C

pulsed; t_p= 1 µs; δ_factor= 0.01

V_TDS

transient drain to

source voltage

I_D

drain current

V_GS= 6 V; T_mb= 25 °C

[1]

11.5

125

150

P_tot

T_j

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

°C

-55

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 6 V; I_D= 3.9 A; T_j= 25 °C;

Fig. 11; Fig. 12; Fig. 13

138

300

190

mΩ

V_GS= 6 V; I_D= 3.9 A; T_j= 150 °C;

Fig. 11; Fig. 14

12 3 4 5 6 7...14

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