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FZT953QTA PDF预览

FZT953QTA

更新时间: 2024-11-16 13:07:55
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率双极晶体管局域网
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5页 98K
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FZT953QTA 数据手册

 浏览型号FZT953QTA的Datasheet PDF文件第2页浏览型号FZT953QTA的Datasheet PDF文件第3页浏览型号FZT953QTA的Datasheet PDF文件第4页浏览型号FZT953QTA的Datasheet PDF文件第5页 
SOT223 PNP SILICON PLANAR HIGH CURRENT  
(HIGH PERFORMANCE) TRANSISTORS  
FZT951  
FZT953  
ISSUE 3 - APRIL 2000  
FEATURES  
*
*
*
*
*
5 Amps continuous current , up to 15 Amps peak current  
Very low saturation voltages  
Excellent gain characteristics specified up to 10 Amps  
C
Ptot = 3 watts  
E
FZT951 exhibts extremely low equivalent on resistance;  
RCE(sat) 55m at 4A  
C
COMPLEMENTARY TYPES - FZT951 = FZT851  
FZT953 = FZT853  
B
PARTMARKING DETAILS -  
DEVICE TYPE IN FULL  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
FZT951  
-100  
FZT953  
-140  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
-100  
V
-6  
V
Peak Pulse Current  
-15  
-10  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
-5  
3
A
Ptot  
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 4 square inch minimum  
3 - 279  

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