Datasheet > FZT955

FZT955

更新时间： 2023-12-06 20:10:26

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	772K
描述
SOT-223

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中文翻译

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数据手册

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FZT955 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-223(8R) Plastic-Encapsulate Transistors

FZT955 TRANSISTOR (PNP)

SOT-223

FEATURES



High Voltage

Low saturation voltages

1. BASE

2. COLLECTOR

3. EMITTER

MARKING: ZT955

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

-180

-140

-6

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

- 4

Collector Power Dissipation

0.8

P_C

Thermal Resistance From Junction To Ambient

Operation Junction and Storage Temperature Range

156

R_θJA

T_J,T_stg

℃/W

℃

-55~+150

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=-0.1mA,I_E=0

V_(BR)CEOI_C=-10mA,I_B=0

V_(BR)EBOI_E=-0.1mA,I_C=0

-180

-140

-6

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_EBO

V_CB=-150V,I_E=0

-50

V_EB=-6V,I_C=0

-10

Emitter cut-off current

h_FE(1)

h_FE(2)

h_FE(3)

V_CE=-5V, I_C=-10mA

V_CE=-5V, I_C=-1A

V_CE=-5V, I_C=-3A

I_C=-100mA,I_B=-5mA

I_C=-500mA,I_B=-50mA

I_C=-1A,I_B=-100mA

I_C=-3A,I_B=-300mA

100

DC current gain

300

-60

-120

-150

-370

-1.11

V_CE(sat)

Collector-emitter saturation voltage

V_BE(sat)

Base-emitter saturation voltage

V_BE

V_CE=-5V, I_C=-3A

Base-emitter voltage

-0.95

f_T

VCE=-10V,IC=-100mA, f=50MHz

V_CB=-20V, I_E=0, f=1MHz

MHz

Transition frequency

C_ob

t _on

t _off

Collector output capacitance

V_CC=-50V, I_C=-1A, I_B1= I_B2=-100mA

Switching Times

1030

www.jscj-elec.com

Rev. - 2.0

12 3 4

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