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FZT955TC PDF预览

FZT955TC

更新时间: 2024-11-16 13:07:55
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管开关光电二极管局域网
页数 文件大小 规格书
5页 117K
描述
Power Bipolar Transistor, 4A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin

FZT955TC 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.2
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:140 V配置:SINGLE
最小直流电流增益 (hFE):75JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
功耗环境最大值:3 W认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):110 MHz
VCEsat-Max:0.37 VBase Number Matches:1

FZT955TC 数据手册

 浏览型号FZT955TC的Datasheet PDF文件第2页浏览型号FZT955TC的Datasheet PDF文件第3页浏览型号FZT955TC的Datasheet PDF文件第4页浏览型号FZT955TC的Datasheet PDF文件第5页 
SOT223 PNP SILICON PLANAR HIGH CURRENT  
(HIGH PERFORMANCE) TRANSISTORS  
ISSUE 2 – OCTOBER 1995  
FZT955  
FZT956  
FEATURES  
*
*
*
4 Amps continuous current (10 Amps peak current)  
Very low saturation voltages  
C
Excellent gain characteristics specified up to 3 Amps  
E
PARTMARKING DETAILS –  
DEVICE TYPE IN FULL  
C
COMPLEMENTARY TYPES – FZT955 - FZT855  
FZT956 - N/A  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
FZT955  
-180  
FZT956  
-220  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
VCBO  
VCEO  
VEBO  
ICM  
-140  
-200  
V
-6  
V
-10  
-4  
-5  
-2  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
A
Ptot  
3
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 4 square inch minimum  
3 - 284  

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