Datasheet > FZT955_05

FZT955_05

更新时间： 2024-01-08 05:27:34

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
5页	223K
描述
SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

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FZT955_05 数据手册

SOT223 PNP SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE) TRANSISTORS

FZT955

FZT956

ISSUE 3 – MARCH 2005

FEATURES

4 Am ps continuous current (10 Am ps peak current)

Very low saturation voltages

Excellent gain characteristics specified up to 3 Am ps

PARTMARKING DETAILS –

DEVICE TYPE IN FULL

COMPLEMENTARY TYPES – FZT955 - FZT855

FZT956 - N/A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

FZT955

-180

FZT956

-220

UNIT

Collector-Base Voltage

Collector-Em itter Voltage

Emitter-Base Voltage

Peak Pulse Current

V_CBO

V_CEO

V_EBO

I_CM

-140

-200

-6

-10

-4

-5

-2

Continuous Collector Current

Power Dissipation at T_amb=25°C

I_C

P_tot

°C

Operating and Storage Temperature

Range

T_j:T_stg

-55 to +150

*The power which can be dissipated assum ing the device is m ounted in a typical m anner on a

P.C.B. with copper equal to 4 square inch m inim um

3 - 284

12 3 4 5

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