FSPYC264R, FSPYC264F
©D200a1tFaaircShihld eSeemticonductor Corporation
December 2001
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Features
• 45A, 250V, r
• UIS Rated
• Total Dose
= 0.046Ω
DS(ON)
Fairchild Star*Power™ Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
TM
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r and Gate
DS(ON)
• Single Event
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADs while maintaining the guaranteed performance for
Single Event Effects (SEE) which the Fairchild FS families
have always featured.
- Safe Operating Area Curve for Single Event Effects
2
- SEE Immunity for LET of 36MeV/mg/cm with
V
up to 100% of Rated Breakdown and
of 10V Off-Bias
DS
V
GS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
DSS
AS
The Fairchild portfolio of Star*Power FETs includes a family
of devices in various voltage, current and package styles.
The Star*Power family consists of Star*Power and
• Photo Current
Star*Power Gold products. Star*Power FETs are optimized
- 21nA Per-RAD (Si)/s Typically
for total dose and r
performance while exhibiting SEE
DS(ON)
• Neutron
capability at full rated voltage up to an LET of 37. Star*Power
Gold FETs have been optimized for SEE and Gate Charge
providing SEE performance to 80% of the rated voltage for
an LET of 82 with extremely low gate charge characteristics.
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
2
- Usable to 1E14 Neutrons/cm
Symbol
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
D
G
S
Packaging
SMD2
Reliability screening is available as either TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45217W.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K
Engineering Samples FSPYC264D1
100K
100K
300K
300K
TXV
Space
TXV
FSPYC264R3
FSPYC264R4
FSPYC264F3
FSPYC264F4
Space
©2001 Fairchild Semiconductor Corporation
FSPYC264R, FSPYC264F Rev. B