Datasheet > FSPYC264R4

FSPYC264R4

更新时间： 2024-11-14 23:52:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	111K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 45A I(D) \| SMT

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中文翻译

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数据手册

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FSPYC264R4 数据手册

FSPYC264R, FSPYC264F

©D²⁰⁰a¹t^Fa^aircS^hih^lde^See^mt^{iconductor Corporation}

December 2001

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 45A, 250V, r

• UIS Rated

• Total Dose

= 0.046Ω

DS(ON)

Fairchild Star*Power™ Rad Hard

MOSFETs have been specifically

developed for high performance

applications in a commercial or

- Meets Pre-RAD Specifications to 100K RAD (Si)

- Rated to 300K RAD (Si)

military space environment. Star*Power MOSFETs offer the

system designer both extremely low r and Gate

DS(ON)

• Single Event

Charge allowing the development of low loss Power

Subsystems. Star*Power FETs combine this electrical

capability with total dose radiation hardness up to 300K

RADs while maintaining the guaranteed performance for

Single Event Effects (SEE) which the Fairchild FS families

have always featured.

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 100% of Rated Breakdown and

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

DSS

The Fairchild portfolio of Star*Power FETs includes a family

of devices in various voltage, current and package styles.

The Star*Power family consists of Star*Power and

• Photo Current

Star*Power Gold products. Star*Power FETs are optimized

- 21nA Per-RAD (Si)/s Typically

for total dose and r

performance while exhibiting SEE

DS(ON)

• Neutron

capability at full rated voltage up to an LET of 37. Star*Power

Gold FETs have been optimized for SEE and Gate Charge

providing SEE performance to 80% of the rated voltage for

an LET of 82 with extremely low gate charge characteristics.

- Maintain Pre-RAD Specifications

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Symbol

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS)

structure. It is specifically designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Packaging

SMD2

Reliability screening is available as either TXV or Space

equivalent of MIL-S-19500.

Formerly available as type TA45217W.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Engineering Samples FSPYC264D1

100K

300K

TXV

Space

TXV

FSPYC264R3

FSPYC264R4

FSPYC264F3

FSPYC264F4

Space

FSPYC264R, FSPYC264F Rev. B

12 3 4 5 6 7

中文翻译

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与FSPYC264R4相关器件

型号	品牌	获取价格	描述	数据表
FSPYE130D1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| SMT
FSPYE130F3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| SMT
FSPYE130F4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| SMT
FSPYE130R3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| SMT
FSPYE130R4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| SMT
FSPYE134D1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT
FSPYE134F3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT
FSPYE134F4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT
FSPYE134R3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT
FSPYE134R4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT

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