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FSPYE234F4 PDF预览

FSPYE234F4

更新时间： 2024-11-15 20:16:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
7页 111K
描述
Power Field-Effect Transistor, 9A I(D), 250V, 0.215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-3

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FSPYE234F4 技术参数

是否Rohs认证： 不符合生命周期：Transferred
零件包装代码：DLCC包装说明：CHIP CARRIER, R-CBCC-N3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.3
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：250 V最大漏极电流 (Abs) (ID)：9 A
最大漏极电流 (ID)：9 A最大漏源导通电阻：0.215 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CBCC-N3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：30 W
最大脉冲漏极电流 (IDM)：32 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子位置：BOTTOM晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FSPYE234F4 数据手册

 浏览型号FSPYE234F4的Datasheet PDF文件第2页浏览型号FSPYE234F4的Datasheet PDF文件第3页浏览型号FSPYE234F4的Datasheet PDF文件第4页浏览型号FSPYE234F4的Datasheet PDF文件第5页浏览型号FSPYE234F4的Datasheet PDF文件第6页浏览型号FSPYE234F4的Datasheet PDF文件第7页 
FSPYE234R, FSPYE234F  
Data Sheet  
December 2001  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 9A, 250V, r  
• UIS Rated  
• Total Dose  
= 0.215Ω  
DS(ON)  
Fairchild Star*Power Rad Hard  
MOSFETs have been specifically  
TM  
developed for high performance  
applications in a commercial or  
military space environment.  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
- Rated to 300K RAD (Si)  
Star*Power MOSFETs offer the system designer both  
• Single Event  
extremely low r  
and Gate Charge allowing the  
DS(ON)  
- Safe Operating Area Curve for Single Event Effects  
development of low loss Power Subsystems. Star*Power  
FETs combine this electrical capability with total dose  
radiation hardness up to 300K RADs while maintaining the  
guaranteed performance for Single Event Effects (SEE)  
which the Fairchild FS families have always featured.  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 100% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
- Typically Survives 2E12 if Current Limited to I  
DSS  
AS  
The Fairchild portfolio of Star*Power FETs includes a family  
of devices in various voltage, current and package styles.  
The Star*Power family consists of Star*Power and  
• Photo Current  
Star*Power Gold products. Star*Power FETs are optimized  
- 4.0nA Per-RAD (Si)/s Typically  
for total dose and r  
performance while exhibiting SEE  
DS(ON)  
• Neutron  
capability at full rated voltage up to an LET of 37. Star*Power  
Gold FETs have been optimized for SEE and Gate Charge  
providing SEE performance to 80% of the rated voltage for  
an LET of 82 with extremely low gate charge characteristics.  
- Maintain Pre-RAD Specifications  
for 1E13 Neutrons/cm  
2
2
- Usable to 1E14 Neutrons/cm  
Symbol  
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS)  
structure. It is specifically designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, power  
distribution, motor drives and relay drivers as well as other  
power control and conditioning applications. As with  
conventional MOSFETs these Radiation Hardened  
MOSFETs offer ease of voltage control, fast switching  
speeds and ability to parallel switching devices.  
D
G
S
Packaging  
SMD.5  
Reliability screening is available as either TXV or Space  
equivalent of MIL-S-19500.  
Formerly available as type TA45216W.  
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Engineering samples FSPYE234D1  
100K  
100K  
300K  
300K  
TXV  
Space  
TXV  
FSPYE234R3  
FSPYE234R4  
FSPYE234F3  
FSPYE234F4  
Space  
©2001 Fairchild Semiconductor Corporation  
FSPYE234R, FSPYE234F Rev. B  
1234567

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