Datasheet > FSPYE230R4

FSPYE230R4

更新时间： 2024-11-14 22:09:51

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	86K
描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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FSPYE230R4 数据手册

FSPYE230R, FSPYE230F

Data Sheet

May 2000

File Number 4852.1

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 12A, 200V, r

• UIS Rated

• Total Dose

= 0.140Ω

DS(ON)

Intersil Star*Power Rad Hard

MOSFETs have been speciﬁcally

developed for high performance

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Rated to 300K RAD (Si)

applications in a commercial or

military space environment. Star*Power MOSFETs offer the

system designer both extremely low r

and Gate

DS(ON)

• Single Event

Charge allowing the development of low loss Power

Subsystems. Star*Power FETs combine this electrical

capability with total dose radiation hardness up to 300K

RADs while maintaining the guaranteed performance for

SEE (Single Event Effects) which the Intersil FS families

have always featured.

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 100% of Rated Breakdown and

of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

DSS

The Intersil portfolio of Star*Power FETS includes a family of

devices in various voltage, current and package styles. The

Star*Power family consists of Star*Power and Star*Power

Gold products. Star*Power FETS are optimized for total dose

- Typically Survives 2E12 if Current Limited to I

• Photo Current

- 3.0nA Per-RAD (Si)/s Typically

and r

performance while exhibiting SEE capability at

DS(ON)

• Neutron

full rated voltage up to an LET of 37. Star*Power Gold FETS

have been optimized for SEE and Gate Charge providing

SEE performance to 80% of the rated voltage for an LET of

82 with extremely low gate charge characteristics.

- Maintain Pre-RAD Speciﬁcations

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Symbol

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld effect transistor of the vertical DMOS (VDMOS)

structure. It is speciﬁcally designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Packaging

SMD.5

Reliability screening is available as either, TXV or Space

equivalent of MIL-S-19500.

Formerly available as type TA45210W.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Engineering samples FSPYE230D1

100K

300K

TXV

FSPYE230R3

FSPYE230R4

FSPYE230F3

FSPYE230F4

Space

TXV

Space

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Star*Power™ is a trademark of Intersil Corporation.

12 3 4 5 6 7 8

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与FSPYE230R4相关器件

型号	品牌	获取价格	描述	数据表
FSPYE234D1	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE234D1	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 250V, 0.215ohm, 1-Element, N-Channel, Silicon, Met
FSPYE234F	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE234F3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE234F4	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE234F4	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9A I(D), 250V, 0.215ohm, 1-Element, N-Channel, Silicon, Met
FSPYE234F4	INFINEON	获取价格	Power Field-Effect Transistor, 9A I(D), 250V, 0.215ohm, 1-Element, N-Channel, Silicon, Met
FSPYE234R	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE234R3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE234R4	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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