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FSPYE234R

更新时间： 2024-11-14 22:09:51
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
8页 82K
描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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FSPYE234R 数据手册

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FSPYE234R, FSPYE234F  
TM  
Data Sheet  
June 2000  
File Number 4873  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 9A, 250V, r  
• UIS Rated  
• Total Dose  
= 0.215Ω  
DS(ON)  
Intersil Star*Power Rad Hard  
MOSFETs have been specifically  
developed for high performance  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
- Rated to 300K RAD (Si)  
applications in a commercial or  
military space environment.  
Star*Power MOSFETs offer the system designer both  
• Single Event  
extremely low r  
and Gate Charge allowing the  
DS(ON)  
- Safe Operating Area Curve for Single Event Effects  
development of low loss Power Subsystems. Star*Power  
FETs combine this electrical capability with total dose  
radiation hardness up to 300K RADs while maintaining the  
guaranteed performance for Single Event Effects (SEE)  
which the Intersil FS families have always featured.  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 100% of Rated Breakdown and  
of 10V Off-Bias  
DS  
V
GS  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
The Intersil portfolio of Star*Power FETs includes a family of  
devices in various voltage, current and package styles. The  
Star*Power family consists of Star*Power and Star*Power  
Gold products. Star*Power FETs are optimized for total dose  
- Typically Survives 2E12 if Current Limited to I  
AS  
• Photo Current  
- 4.0nA Per-RAD (Si)/s Typically  
and r  
performance while exhibiting SEE capability at  
DS(ON)  
• Neutron  
full rated voltage up to an LET of 37. Star*Power Gold FETs  
have been optimized for SEE and Gate Charge providing  
SEE performance to 80% of the rated voltage for an LET of  
82 with extremely low gate charge characteristics.  
- Maintain Pre-RAD Specifications  
for 1E13 Neutrons/cm  
2
2
- Usable to 1E14 Neutrons/cm  
Symbol  
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS)  
structure. It is specifically designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, power  
distribution, motor drives and relay drivers as well as other  
power control and conditioning applications. As with  
conventional MOSFETs these Radiation Hardened  
MOSFETs offer ease of voltage control, fast switching  
speeds and ability to parallel switching devices.  
D
G
S
Packaging  
SMD.5  
Reliability screening is available as either TXV or Space  
equivalent of MIL-S-19500.  
Formerly available as type TA45216W.  
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Engineering samples FSPYE234D1  
100K  
100K  
300K  
300K  
TXV  
Space  
TXV  
FSPYE234R3  
FSPYE234R4  
FSPYE234F3  
FSPYE234F4  
Space  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright © Intersil Corporation 2000  
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