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FSPYE234F4

更新时间： 2024-11-15 20:13:19
品牌 Logo 应用领域
英飞凌 - INFINEON 开关脉冲晶体管
页数 文件大小 规格书
10页 177K
描述
Power Field-Effect Transistor, 9A I(D), 250V, 0.215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CERAMIC, LCC-3

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FSPYE234F4 数据手册

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FSPYE234R, FSPYE234F  
Data Sheet  
June 2001  
File Number 4873  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 9A, 250V, r  
• UIS Rated  
• Total Dose  
= 0.215Ω  
DS(ON)  
Fairchild Star*Power™ Rad Hard  
MOSFETs have been specifically  
TM  
developed for high performance  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
- Rated to 300K RAD (Si)  
applications in a commercial or  
military space environment. Star*Power MOSFETs offer the  
system designer both extremely low r  
and Gate  
DS(ON)  
• Single Event  
Charge allowing the development of low loss Power  
Subsystems. Star*Power FETs combine this electrical  
capability with total dose radiation hardness up to 300K  
RADS while maintaining the guaranteed performance for  
SEE (Single Event Effects) which the Fairchild FS families  
have always featured.  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
V
up to 100% of Rated Breakdown and  
of 10V Off-Bias  
DS  
GS  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
DSS  
The Fairchild portfolio of Star*Power FETs includes a family  
of devices in various voltage, current and package styles.  
The Star*Power family consists of Star*Power and  
- Typically Survives 2E12 if Current Limited to I  
AS  
• Photo Current  
Star*Power Gold products. Star*Power FETs are optimized  
- 4.0nA Per-RAD (Si)/s Typically  
for total dose and r  
performance while exhibiting SEE  
DS(ON)  
• Neutron  
capability at full rated voltage up to an LET of 37.  
Star*Power Gold FETs have been optimized for SEE and  
Gate Charge providing SEE performance to 80% of the  
rated voltage for an LET of 82 with extremely low gate  
charge characteristics.  
- Maintain Pre-RAD Specifications  
for 1E13 Neutrons/cm  
2
2
- Usable to 1E14 Neutrons/cm  
Symbol  
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS)  
structure. It is specifically designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, power  
distribution, motor drives and relay drivers as well as other  
power control and conditioning applications. As with  
conventional MOSFETs these Radiation Hardened  
MOSFETs offer ease of voltage control, fast switching  
speeds and ability to parallel switching devices.  
D
G
S
Packaging  
SMD.5  
Reliability screening is available as either TXV or Space  
equivalent of MIL-S-19500.  
Formerly available as type TA45216W.  
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Engineering samples FSPYE234D1  
100K  
100K  
300K  
300K  
TXV  
Space  
TXV  
FSPYE234R3  
FSPYE234R4  
FSPYE234F3  
FSPYE234F4  
Space  
©2001 Fairchild Semiconductor Corporation  
FSPYE234R, FSPYE234F Rev. A2  
1234567...10

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