Datasheet > FSPYE130F4

FSPYE130F4

更新时间： 2024-11-14 23:52:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	117K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| SMT

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数据手册

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FSPYE130F4 数据手册

FSPYE130R, FSPYE130F

Data Sheet

December 2001

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 20A (Current Limited by Package), 100V, r

= 0.043Ω

DS(ON)

Fairchild Star*Power Rad Hard

MOSFETs have been specifically

• UIS Rated

• Total Dose

developed for high performance

applications in a commercial or

military space environment. Star*Power MOSFETs offer the

- Meets Pre-rad Specifications to 100 krad (Si)

- Rated to 300 krad (Si)

system designer both extremely low r

and Gate

DS(ON)

• Single Event

Charge allowing the development of low loss Power

Subsystems. Star*Power FETs combine this electrical

capability with total dose radiation hardness up to 300 krads

while maintaining the guaranteed performance for Single

Event Effects (SEE) which the Fairchild FS families have

always featured.

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 100% of Rated Breakdown

of 5V Off-Bias

• Dose Rate

- Typically Survives 3E9 rad (Si)/s at 80% BV

DSS

The Fairchild portfolio of Star*Power FETs includes a family

of devices in various voltage, current and package styles.

The Star*Power family consists of Star*Power and

- Typically Survives 2E12 if Current Limited to I

• Photo Current

Star*Power Gold products. Star*Power FETs are optimized

- 1.5nA Per-rad (Si)/s Typically

for total dose and r

performance while exhibiting SEE

DS(ON)

• Neutron

capability at full rated voltage up to an LET of 37. Star*Power

Gold FETs have been optimized for SEE and Gate Charge

providing SEE performance to 80% of the rated voltage for

an LET of 82 with extremely low gate charge characteristics.

- Maintain Pre-rad Specifications

for 3E13 Neutrons/cm

- Usable to 3E14 Neutrons/cm

Symbol

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS)

structure. It is specifically designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Packaging

SMD.5

Reliability screening is available as either TXV or Space

equivalent of MIL-PRF-19500.

Formerly available as type TA45212W.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Engineering Samples FSPYE130D1

100K

300K

TXV

Space

TXV

FSPYE130R3

FSPYE130R4

FSPYE130F3

FSPYE130F4

Space

FSPYE130R, FSPYE130F Rev. B

12 3 4 5 6 7

中文翻译

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与FSPYE130F4相关器件

型号	品牌	获取价格	描述	数据表
FSPYE130R3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| SMT
FSPYE130R4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 20A I(D) \| SMT
FSPYE134D1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT
FSPYE134F3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT
FSPYE134F4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT
FSPYE134R3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT
FSPYE134R4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT
FSPYE230	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE230D1	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE230F	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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