Datasheet > FSPYE134F4

FSPYE134F4

更新时间： 2024-11-14 23:52:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	117K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT

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FSPYE134F4 数据手册

FSPYE134R, FSPYE134F

Data Sheet

December 2001

Radiation Hardened, SEGR Resistant

N-Channel Power MOSFETs

Features

• 20A*, 150V, r

• UIS Rated

• Total Dose

= 0.088Ω

DS(ON)

Fairchild Star*Power™ Rad Hard

MOSFETs have been specifically

developed for high performance

applications in a commercial or

military space environment. Star*Power MOSFETs offer the

- Meets Pre-RAD Specifications to 100K RAD (Si)

- Rated to 300K RAD (Si)

system designer both extremely low r

and Gate

• Single Event

DS(ON)

Charge allowing the development of low loss Power

Subsystems. Star*Power FETs combine this electrical

capability with total dose radiation hardness up to 300K

RADs while maintaining the guaranteed performance for

Single Event Effects (SEE) which the Fairchild FS families

have always featured.

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm with

up to 100% of Rated Breakdown

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

DSS

The Fairchild portfolio of Star*Power FETs includes a family

of devices in various voltage, current and package styles.

The Star*Power family consists of Star*Power and

• Photo Current

- 2nA Per-RAD(Si)/s Typically

Star*Power Gold products. Star*Power FETs are optimized

• Neutron

for total dose and r

performance while exhibiting SEE

DS(ON)

- Maintain Pre-RAD Specifications

capability at full rated voltage up to an LET of 37. Star*Power

Gold FETs have been optimized for SEE and Gate Charge

providing SEE performance to 80% of the rated voltage for

an LET of 82 with extremely low gate charge characteristics.

for 1E13 Neutrons/cm

- Usable to 1E14 Neutrons/cm

Symbol

This MOSFET is an enhancement-mode silicon-gate power

field effect transistor of the vertical DMOS (VDMOS)

structure. It is specifically designed and processed to be

radiation tolerant. The MOSFET is well suited for

applications exposed to radiation environments such as

switching regulation, switching converters, power

distribution, motor drives and relay drivers as well as other

power control and conditioning applications. As with

conventional MOSFETs these Radiation Hardened

MOSFETs offer ease of voltage control, fast switching

speeds and ability to parallel switching devices.

Packaging

SMD.5

Reliability screening is available as either TXV or Space

equivalent of MIL-PRF-19500.

*Current is limited by the package capability

Formerly available as type TA45214W.

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K

Engineering samples FSPYE134D1

100K

300K

TXV

FSPYE134R3

FSPYE134R4

FSPYE134F3

FSPYE134F4

Space

TXV

Space

FSPYE134R, FSPYE134F Rev. B

12 3 4 5 6 7 8

中文翻译

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与FSPYE134F4相关器件

型号	品牌	获取价格	描述	数据表
FSPYE134R3	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT
FSPYE134R4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 20A I(D) \| SMT
FSPYE230	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE230D1	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE230F	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE230F3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE230F4	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE230R	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE230R3	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
FSPYE230R4	INTERSIL	获取价格	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

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