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FSPYE134F4 PDF预览

FSPYE134F4

更新时间: 2024-11-14 23:52:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
8页 117K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | SMT

FSPYE134F4 数据手册

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FSPYE134R, FSPYE134F  
Data Sheet  
December 2001  
Radiation Hardened, SEGR Resistant  
N-Channel Power MOSFETs  
Features  
• 20A*, 150V, r  
• UIS Rated  
Total Dose  
= 0.088  
DS(ON)  
Fairchild Star*Power™ Rad Hard  
MOSFETs have been specifically  
TM  
developed for high performance  
applications in a commercial or  
military space environment. Star*Power MOSFETs offer the  
- Meets Pre-RAD Specifications to 100K RAD (Si)  
- Rated to 300K RAD (Si)  
system designer both extremely low r  
and Gate  
• Single Event  
DS(ON)  
Charge allowing the development of low loss Power  
Subsystems. Star*Power FETs combine this electrical  
capability with total dose radiation hardness up to 300K  
RADs while maintaining the guaranteed performance for  
Single Event Effects (SEE) which the Fairchild FS families  
have always featured.  
- Safe Operating Area Curve for Single Event Effects  
2
- SEE Immunity for LET of 36MeV/mg/cm with  
V
up to 100% of Rated Breakdown  
DS  
• Dose Rate  
- Typically Survives 3E9 RAD (Si)/s at 80% BV  
- Typically Survives 2E12 if Current Limited to I  
DSS  
AS  
The Fairchild portfolio of Star*Power FETs includes a family  
of devices in various voltage, current and package styles.  
The Star*Power family consists of Star*Power and  
• Photo Current  
- 2nA Per-RAD(Si)/s Typically  
Star*Power Gold products. Star*Power FETs are optimized  
• Neutron  
for total dose and r  
performance while exhibiting SEE  
DS(ON)  
- Maintain Pre-RAD Specifications  
2
capability at full rated voltage up to an LET of 37. Star*Power  
Gold FETs have been optimized for SEE and Gate Charge  
providing SEE performance to 80% of the rated voltage for  
an LET of 82 with extremely low gate charge characteristics.  
for 1E13 Neutrons/cm  
2
- Usable to 1E14 Neutrons/cm  
Symbol  
D
This MOSFET is an enhancement-mode silicon-gate power  
field effect transistor of the vertical DMOS (VDMOS)  
structure. It is specifically designed and processed to be  
radiation tolerant. The MOSFET is well suited for  
applications exposed to radiation environments such as  
switching regulation, switching converters, power  
distribution, motor drives and relay drivers as well as other  
power control and conditioning applications. As with  
conventional MOSFETs these Radiation Hardened  
MOSFETs offer ease of voltage control, fast switching  
speeds and ability to parallel switching devices.  
G
S
Packaging  
SMD.5  
Reliability screening is available as either TXV or Space  
equivalent of MIL-PRF-19500.  
*Current is limited by the package capability  
Formerly available as type TA45214W.  
Ordering Information  
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND  
10K  
Engineering samples FSPYE134D1  
100K  
100K  
300K  
300K  
TXV  
FSPYE134R3  
FSPYE134R4  
FSPYE134F3  
FSPYE134F4  
Space  
TXV  
Space  
©2001 Fairchild Semiconductor Corporation  
FSPYE134R, FSPYE134F Rev. B  

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