FSPYE134R, FSPYE134F
Data Sheet
December 2001
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Features
• 20A*, 150V, r
• UIS Rated
• Total Dose
= 0.088Ω
DS(ON)
Fairchild Star*Power™ Rad Hard
MOSFETs have been specifically
TM
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
system designer both extremely low r
and Gate
• Single Event
DS(ON)
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADs while maintaining the guaranteed performance for
Single Event Effects (SEE) which the Fairchild FS families
have always featured.
- Safe Operating Area Curve for Single Event Effects
2
- SEE Immunity for LET of 36MeV/mg/cm with
V
up to 100% of Rated Breakdown
DS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
- Typically Survives 2E12 if Current Limited to I
DSS
AS
The Fairchild portfolio of Star*Power FETs includes a family
of devices in various voltage, current and package styles.
The Star*Power family consists of Star*Power and
• Photo Current
- 2nA Per-RAD(Si)/s Typically
Star*Power Gold products. Star*Power FETs are optimized
• Neutron
for total dose and r
performance while exhibiting SEE
DS(ON)
- Maintain Pre-RAD Specifications
2
capability at full rated voltage up to an LET of 37. Star*Power
Gold FETs have been optimized for SEE and Gate Charge
providing SEE performance to 80% of the rated voltage for
an LET of 82 with extremely low gate charge characteristics.
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
Symbol
D
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
G
S
Packaging
SMD.5
Reliability screening is available as either TXV or Space
equivalent of MIL-PRF-19500.
*Current is limited by the package capability
Formerly available as type TA45214W.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K
Engineering samples FSPYE134D1
100K
100K
300K
300K
TXV
FSPYE134R3
FSPYE134R4
FSPYE134F3
FSPYE134F4
Space
TXV
Space
©2001 Fairchild Semiconductor Corporation
FSPYE134R, FSPYE134F Rev. B