FSPYE230R, FSPYE230F
TM
Data Sheet
May 2000
File Number 4852.1
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Features
• 12A, 200V, r
• UIS Rated
• Total Dose
= 0.140Ω
DS(ON)
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r
and Gate
DS(ON)
• Single Event
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADs while maintaining the guaranteed performance for
SEE (Single Event Effects) which the Intersil FS families
have always featured.
- Safe Operating Area Curve for Single Event Effects
2
- SEE Immunity for LET of 36MeV/mg/cm with
V
up to 100% of Rated Breakdown and
of 10V Off-Bias
DS
V
GS
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
The Intersil portfolio of Star*Power FETS includes a family of
devices in various voltage, current and package styles. The
Star*Power family consists of Star*Power and Star*Power
Gold products. Star*Power FETS are optimized for total dose
- Typically Survives 2E12 if Current Limited to I
AS
• Photo Current
- 3.0nA Per-RAD (Si)/s Typically
and r
performance while exhibiting SEE capability at
DS(ON)
• Neutron
full rated voltage up to an LET of 37. Star*Power Gold FETS
have been optimized for SEE and Gate Charge providing
SEE performance to 80% of the rated voltage for an LET of
82 with extremely low gate charge characteristics.
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
2
- Usable to 1E14 Neutrons/cm
Symbol
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
D
G
S
Packaging
SMD.5
Reliability screening is available as either, TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45210W.
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K
Engineering samples FSPYE230D1
100K
100K
300K
300K
TXV
FSPYE230R3
FSPYE230R4
FSPYE230F3
FSPYE230F4
Space
TXV
Space
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Star*Power™ is a trademark of Intersil Corporation.
1
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