Datasheet > FQU18N20V2_09

FQU18N20V2_09

更新时间： 2024-11-21 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	754K
描述
200V N-Channel MOSFET

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FQU18N20V2_09 数据手册

January 2009

QFET^®

FQD18N20V2 / FQU18N20V2

200V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as automotive, high

efficiency switching for DC/DC converters, and DC motor

control.

•

15A, 200V, R

= 0.14Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 20 nC)

Low Crss ( typical 25 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS Compliant

! "

G !

I-PAK

FQU Series

D-PAK

FQD Series

G D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQD18N20V2 / FQU18N20V2

Units

Drain-Source Voltage

200

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

9.75

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

340

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

8.3

V/ns

dv/dt

6.5

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.67

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.5

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. B2,January 2009

12 3 4 5 6 7...9

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