FQU24N08

更新时间： 2024-11-24 22:25:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	709K
描述
80V N-Channel MOSFET

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中文翻译

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数据手册

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FQU24N08 数据手册

August 2000

QFET

FQD24N08 / FQU24N08

80V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as automotive, high

efficiency switching for DC/DC converters, and DC motor

control.

•

19.6A, 80V, R_DS(on)= 0.06Ω @V_GS= 10 V

Low gate charge ( typical 19 nC)

Low Crss ( typical 50 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

I-PAK

FQU Series

D-PAK

FQD Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

V_DSS

Parameter

FQD24N08 / FQU24N08

Units

Drain-Source Voltage

19.6

12.4

78.4

± 25

230

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

Drain Current

I_DM

(Note 1)

Drain Current

V_GSS

E_AS

I_AR

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

19.6

5.0

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_A= 25°C) *

V/ns

6.5

2.5

Power Dissipation (T_C= 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.4

W/°C

°C

T_J, T_STG

T_L

-55 to +150

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.5

Units

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A, August 2000

12 3 4 5 6 7...9

中文翻译

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