5秒后页面跳转
FQU26N03LTU PDF预览

FQU26N03LTU

更新时间: 2024-11-26 03:03:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 674K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

FQU26N03LTU 数据手册

 浏览型号FQU26N03LTU的Datasheet PDF文件第2页浏览型号FQU26N03LTU的Datasheet PDF文件第3页浏览型号FQU26N03LTU的Datasheet PDF文件第4页浏览型号FQU26N03LTU的Datasheet PDF文件第5页浏览型号FQU26N03LTU的Datasheet PDF文件第6页浏览型号FQU26N03LTU的Datasheet PDF文件第7页 
May 2001  
TM  
QFET  
FQD26N03L / FQU26N03L  
30V LOGIC N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as DC/DC  
converters, high efficiency switching for power  
management in portable and battery operated products.  
19A, 30V, R  
= 0.045@V = 10 V  
DS(on) GS  
Low gate charge ( typical 8.0 nC)  
Low Crss ( typical 60 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
D
"
! "  
"
"
!
G
I-PAK  
FQU Series  
D-PAK  
FQD Series  
G
S
G
D
!
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQD26N03L / FQU26N03L  
Units  
V
V
I
Drain-Source Voltage  
30  
19  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
12  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
76  
A
DM  
V
E
I
Gate-Source Voltage  
± 20  
150  
19  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
3.1  
mJ  
V/ns  
W
AR  
dv/dt  
7.0  
Power Dissipation (T = 25°C) *  
2.5  
P
A
D
Power Dissipation (T = 25°C)  
31  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.25  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
4.03  
50  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2001 Fairchild Semiconductor Corporation  
Rev. A1. May 2001  

与FQU26N03LTU相关器件

型号 品牌 获取价格 描述 数据表
FQU2N100 FAIRCHILD

获取价格

1000V N-Channel MOSFET
FQU2N100TU FAIRCHILD

获取价格

暂无描述
FQU2N100TU ONSEMI

获取价格

功率 MOSFET,N 沟道,QFET®,1000 V,1.6 A,9 Ω,IPAK
FQU2N30 FAIRCHILD

获取价格

300V N-Channel MOSFET
FQU2N40 FAIRCHILD

获取价格

400V N-Channel MOSFET
FQU2N40TU FAIRCHILD

获取价格

Power Field-Effect Transistor, 1.4A I(D), 400V, 5.8ohm, 1-Element, N-Channel, Silicon, Met
FQU2N50 FAIRCHILD

获取价格

500V N-Channel MOSFET
FQU2N50B FAIRCHILD

获取价格

500V N-Channel MOSFET
FQU2N50BTU FAIRCHILD

获取价格

Power Field-Effect Transistor, 1.6A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Met
FQU2N50BTU ROCHESTER

获取价格

1.6A, 500V, 5.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3