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FQU17P06TU_NL PDF预览

FQU17P06TU_NL

更新时间: 2024-11-21 13:07:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
9页 684K
描述
Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, LEAD FREE, IPAK-3

FQU17P06TU_NL 技术参数

生命周期:Obsolete零件包装代码:TO-251
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.76Is Samacsys:N
雪崩能效等级(Eas):300 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):12 A
最大漏源导通电阻:0.135 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:P-CHANNEL
最大脉冲漏极电流 (IDM):48 A认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQU17P06TU_NL 数据手册

 浏览型号FQU17P06TU_NL的Datasheet PDF文件第2页浏览型号FQU17P06TU_NL的Datasheet PDF文件第3页浏览型号FQU17P06TU_NL的Datasheet PDF文件第4页浏览型号FQU17P06TU_NL的Datasheet PDF文件第5页浏览型号FQU17P06TU_NL的Datasheet PDF文件第6页浏览型号FQU17P06TU_NL的Datasheet PDF文件第7页 
May 2001  
TM  
QFET  
FQD17P06 / FQU17P06  
60V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand a high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for low voltage applications such as automotive,  
DC/DC converters, and high efficiency switching for power  
management in portable and battery operated products.  
-12A, -60V, R  
= 0.135@V = -10 V  
DS(on) GS  
Low gate charge ( typical 21 nC)  
Low Crss ( typical 80 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
S
!
D
G!  
I-PAK  
FQU Series  
D-PAK  
FQD Series  
G
S
G
D
S
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQD17P06 / FQU17P06  
Units  
V
V
I
Drain-Source Voltage  
-60  
-12  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
-7.6  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
-48  
A
DM  
V
E
I
Gate-Source Voltage  
± 25  
300  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
-12  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
4.4  
mJ  
V/ns  
W
AR  
dv/dt  
-7.0  
Power Dissipation (T = 25°C) *  
2.5  
P
A
D
Power Dissipation (T = 25°C)  
44  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.35  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
2.85  
50  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2001 Fairchild Semiconductor Corporation  
Rev. A2. May 2001  

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