型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQD10N20CTF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Me |
![]() |
FQD10N20CTF_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Me |
![]() |
FQD10N20CTM | FAIRCHILD |
获取价格 |
N-Channel QFET MOSFET 200 V, 7.8 A, 360 mOhm |
![]() |
FQD10N20CTM | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,200 V,10 A,360 mΩ,DPAK |
![]() |
FQD10N20L | FAIRCHILD |
获取价格 |
200V LOGIC N-Channel MOSFET |
![]() |
FQD10N20L_13 | FAIRCHILD |
获取价格 |
N-Channel QFET MOSFET |
![]() |
FQD10N20LTF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Me |
![]() |
FQD10N20LTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Me |
![]() |
FQD10N20LTM | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,逻辑电平,QFET®,200 V,7.6 A,380 mΩ, |
![]() |
FQD10N20TF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 7.6A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Me |
![]() |