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FQAF34N20L PDF预览

FQAF34N20L

更新时间: 2024-09-13 22:13:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 660K
描述
200V LOGIC N-Channel MOSFET

FQAF34N20L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3PF包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
Is Samacsys:N雪崩能效等级(Eas):640 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):23 A最大漏极电流 (ID):23 A
最大漏源导通电阻:0.08 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):95 W最大脉冲漏极电流 (IDM):92 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQAF34N20L 数据手册

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June 2000  
TM  
QFET  
FQAF34N20L  
200V LOGIC N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters,  
switch mode power supply, motor control.  
23A, 200V, R  
= 0.075@V = 10 V  
DS(on) GS  
Low gate charge ( typical 55 nC)  
Low Crss ( typical 52 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
Low level gate drive requirement allowing direct  
opration from logic drivers  
D
!
"
! "  
"
G !  
"
TO-3PF  
FQAF Series  
!
S
G
D S  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQAF34N20L  
Units  
V
V
I
Drain-Source Voltage  
200  
23  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
14.5  
92  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 20  
640  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
23  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
9.5  
mJ  
V/ns  
W
AR  
dv/dt  
5.5  
P
Power Dissipation (T = 25°C)  
95  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.76  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
Max  
1.32  
40  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
--  
--  
θJC  
θJA  
©2000 Fairchild Semiconductor International  
Rev. A, June 2000  

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