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FQAF5N90 PDF预览

FQAF5N90

更新时间: 2024-09-13 22:18:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 662K
描述
900V N-Channel MOSFET

FQAF5N90 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-3PF包装说明:TO-3PF, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.22
Is Samacsys:N雪崩能效等级(Eas):660 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (Abs) (ID):4.1 A
最大漏极电流 (ID):4.1 A最大漏源导通电阻:2.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):90 W最大脉冲漏极电流 (IDM):16.4 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQAF5N90 数据手册

 浏览型号FQAF5N90的Datasheet PDF文件第2页浏览型号FQAF5N90的Datasheet PDF文件第3页浏览型号FQAF5N90的Datasheet PDF文件第4页浏览型号FQAF5N90的Datasheet PDF文件第5页浏览型号FQAF5N90的Datasheet PDF文件第6页浏览型号FQAF5N90的Datasheet PDF文件第7页 
September 2000  
TM  
QFET  
FQAF5N90  
900V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supply.  
4.1A, 900V, R  
= 2.3 @ V = 10 V  
DS(on) GS  
Low gate charge ( typical 31 nC)  
Low Crss ( typical 13 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
"
! "  
"
!
G
"
TO-3PF  
FQAF Series  
G
!
S
D S  
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQAF5N90  
900  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
4.1  
A
D
C
- Continuous (T = 100°C)  
2.6  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
16.4  
± 30  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
660  
mJ  
A
4.1  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
9.0  
mJ  
V/ns  
W
AR  
dv/dt  
4.0  
P
Power Dissipation (T = 25°C)  
90  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.72  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
1.39  
40  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
--  
©2000 Fairchild Semiconductor International  
Rev. A, September 2000  

FQAF5N90 替代型号

型号 品牌 替代类型 描述 数据表
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