Datasheet > FQAF6N80

FQAF6N80

更新时间： 2024-09-13 22:31:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	663K
描述
800V N-Channel MOSFET

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数据手册

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FQAF6N80 数据手册

September 2000

QFET

FQAF6N80

800V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

•

4.4A, 800V, R

= 1.95Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 31 nC)

Low Crss ( typical 14 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

TO-3PF

FQAF Series

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQAF6N80

800

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

4.4

- Continuous (T = 100°C)

2.78

(Note 1)

Drain Current

- Pulsed

17.6

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

680

4.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

9.0

V/ns

dv/dt

4.0

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.72

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

1.39

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

θJC

θJA

Rev. A, September 2000

12 3 4 5 6 7 8

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