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FQAF47P06 PDF预览

FQAF47P06

更新时间: 2024-09-13 22:15:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 712K
描述
60V P-Channel MOSFET

FQAF47P06 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-3PF包装说明:TO-3PF, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.83
Is Samacsys:N雪崩能效等级(Eas):820 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):38 A
最大漏极电流 (ID):38 A最大漏源导通电阻:0.026 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):152 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQAF47P06 数据手册

 浏览型号FQAF47P06的Datasheet PDF文件第2页浏览型号FQAF47P06的Datasheet PDF文件第3页浏览型号FQAF47P06的Datasheet PDF文件第4页浏览型号FQAF47P06的Datasheet PDF文件第5页浏览型号FQAF47P06的Datasheet PDF文件第6页浏览型号FQAF47P06的Datasheet PDF文件第7页 
May 2001  
TM  
QFET  
FQAF47P06  
60V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand a high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for low voltage applications such as automotive,  
DC/DC converters, and high efficiency switching for power  
management in portable and battery operated products.  
-38A, -60V, R  
= 0.026@V = -10 V  
DS(on) GS  
Low gate charge ( typical 84 nC)  
Low Crss ( typical 320 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
S
!
G!  
TO-3PF  
FQAF Series  
G
D S  
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQAF47P06  
-60  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
-38  
A
D
C
- Continuous (T = 100°C)  
-26.8  
-152  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 25  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
820  
mJ  
A
AS  
-38  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
10  
mJ  
V/ns  
W
AR  
dv/dt  
-7.0  
P
Power Dissipation (T = 25°C)  
100  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.67  
W/°C  
°C  
T , T  
-55 to +175  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
1.5  
40  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
--  
©2001 Fairchild Semiconductor Corporation  
Rev. A2. May 2001  

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