Datasheet > FMMT591

FMMT591

更新时间： 2024-09-13 10:34:51

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	400K
描述
TRANSISTOR (PNP)

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中文翻译

获取价格

数据手册

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FMMT591 数据手册

FMMT591

TRANSISTOR (PNP)

SOT-23

FEATURES

Low equivalent on-resistance

1. BASE

2. EMITTER

3. COLLECTOR

Marking :591

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

-80

Units

-60

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-1

P_C

500

150

-55-150

T_j

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-80

-60

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-100μA, I_E=0

I_C=-10mA, I_B=0

I_E=-100μA, I_C=0

V_CB=-60V, I_E=0

V_EB=-4V, I_C=0

V_(BR)CEO

V_(BR)EBO

I_CBO

μA

-0.1

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=-5V, I_C=-1mA

100

h_FE(2)

_CE=-5V, I_C=-500mA

_CE=-5V, I_C=-1A

300

DC current gain

h_FE(3)

h_FE(4)

_CE=-5V, I_C=-2A

V_CE(sat)1

V_CE(sat)2

V_BE(sat)

I_C=-500mA, I_B=-50mA

I_C=-1A, I_B=-100mA

-0.3

-0.6

-1.2

-1

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

V_BE

_CE=-5V, I_C=-1A

Transition frequency

150

MHz

f_T

V_CE=-10V,I_C=-50mA,,f=100MHz

V_CB=-10V,f=1MHz

Collector output capacitance

C_ob

¹Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%.

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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