Datasheet > FMMT591

FMMT591

更新时间： 2024-09-13 06:59:43

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	35K
描述
Medium Power Transistor

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中文翻译

获取价格

数据手册

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FMMT591 数据手册

SMD Type

TransistIoCrs

Medium Power Transistor

FMMT591

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low equivalent on-resistance.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

Unit

-80

-60

-5

-2

Peak collector current

Collector current

I^C

-1

Base current

I^B

-200

Power dissipation

P^tot

500

Operating and storage temperature range

T^j,Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

V^(BR)CBOIC=-100ìA

V^(BR)CEOIC=-10mA

V^(BR)EBOIE=-100ìA

-80

-60

-5

I^CBO

I^EBO

VCB=-60V

VEB=-4V

-100

-0.6

-1.2

-1.0

Emitter cut-off current

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Base-emitter voltage *

V^CE(sat) IC=-1A,IB=-100mA

V^BE(sat) IC=-1A,IB=-100mA

V^BE(ON)IC=-1A,VCE=-5V

I^C=-1mA, VCE=-2V*

100

I^C=-500mA,VCE=-5V

h^FE

I^C=-1A, VCE=-2V*

300

Static Forward Current TransferRatio

I^C=-2A, VCE=-2V*

Current-gain-bandwidth product

Output capacitance

f^T

IC=-50mA,VCE=-10V,f=100MHz

VCB=-10V,f=1MHz

150

MHz

C^obo

* Pulse test: tp

Marking

300 ìs; d

0.02.

591

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中文翻译

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