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FMMT4400 PDF预览

FMMT4400

更新时间: 2024-01-02 14:22:19
品牌 Logo 应用领域
TYSEMI 晶体晶体管
页数 文件大小 规格书
1页 89K
描述
General purpose transistors

FMMT4400 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.4
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):255 ns最大开启时间(吨):35 ns

FMMT4400 数据手册

  
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Product specification  
FMMT4400  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
General purpose transistors.  
1
2
+0.1  
0.95  
-0.1  
+0.05  
-0.01  
0.1  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
60  
Collector-emitter voltage  
Emitter-base voltage  
40  
6
V
V
Collector current  
600  
mA  
mW  
Power dissipation  
Ptot  
330  
Operating and storage temperature range  
Tj,Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
60  
40  
6
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector-emitter cut-off current  
Base cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICEX  
IC=0.1mA  
V
IC=1mA  
V
IE=0.1mA  
0.1  
0.1  
ìA  
ìA  
VCE=35V VEB(off) =0.4V  
VCE=35V VEB(off) =3V  
IC=150mA, VCE=1V  
IBEX  
DC current gain *  
hFE  
50  
150  
0.4  
IC=150mA,IB=15mA  
IC=500mA,IB=50mA  
Collector-emitter saturation voltage *  
Base-emitter saturation voltage *  
VCE(sat)  
VBE(sat)  
V
V
0.75  
0.75  
200  
0.95  
1.2  
IC=150mA,IB=15mA  
IC=500mA,IB=50mA  
Current-gain-bandwidth product  
Output capacitance  
fT  
IC=20mA, VCE=10V f=100KHz  
MHz  
pF  
Cobo  
Cibo  
6.5  
30  
VCB=5V, IE=0, f=100KHz  
VBE=0.5V, IC=0, f=100KHz  
Input capacitance  
pF  
VCC=30V, IC=150mA,IB1=15mA  
VBE(off)=2V  
Delay time  
ton  
35  
ns  
ns  
VCC=30V, IC=150mA  
IB1= IB2=15mA  
Storage time  
toff  
255  
* Pulse test: tp  
300 ìs; d  
0.02.  
Marking  
Marking  
1KZ  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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