Datasheet > FMMT4401-1L

FMMT4401-1L

更新时间： 2024-09-23 22:36:27

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
2页	33K
描述
SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS

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中文翻译

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数据手册

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FMMT4401-1L 数据手册

SOT23 NPN SILICON PLANAR

FMMT4400

FMMT4401

GENERAL PURPOSE TRANSISTORS

✪

ISSUE 4 FEBRUARY 1997

PARTMARKING DETAILS:

FMMT4400 - 1KZ

FMMT4401 - 1L

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

600

°C

P_tot

330

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

FMMT4400

MIN. MAX.

FMMT4401

MIN.

MAX.

PARAMETER

SYMBOL

V_(BR)CEO

CONDITIONS

I_C=1mA, I_B=0

UNIT

Collector-Emitter

Breakdown Voltage

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)EBO

I_CEX

I_C=0.1mA, I_E=0

I_E=0.1mA, I_C=0

Emitter-Base

Breakdown Current

Collector-Emitter

Cut-Off Current

0.1

V_CE=35V

V_EB(off)=0.4V

µA

Base Cut-Off

Current

I_BEX

V_CE=35V

V_EB(off)=3V

Static Forward

Current

TransferRatio

h_FE

100

I_C=0.1mA, V_CE=1V

I_C=1mA, V_CE=1V

I_C=10mA, V_CE=1V

I_C=150mA, V_CE=1V*

I_C=500mA, V_CE=2V*

150

300

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

f_T

0.4

0.75

0.4

0.75

I_C=150mA,I_B=15mA*

I_C=500mA,I_B=50mA*

Base-Emitter

Saturation Voltage

0.75

200

0.95

1.2

0.75

250

0.95

1.2

I_C=150mA,I_B=15mA*

I_C=500mA,I_B=50mA*

Transition

Frequency

MHz I_C=20mA,V_CE=10V

f=100kHz

Output Capacitance C_obo

Input Capacitance C_ibo

6.5

pF V_CB=5 V,I_E=0

f=100kHz

pF V_BE=0.5V, I_C=0

f=100kHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

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