Datasheet > FM24V02A-GTR

FM24V02A-GTR

更新时间： 2024-02-16 02:16:55

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		光电二极管内存集成电路
页数	文件大小	规格书
19页	922K
描述
Memory Circuit, 32KX8, CMOS, PDSO8, SOIC-8

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中文翻译

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技术参数
数据手册
替代型号

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FM24V02A-GTR 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SOP,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.32.00.71
风险等级：	5.6	JESD-30 代码：	R-PDSO-G8
长度：	4.889 mm	内存密度：	262144 bit
内存集成电路类型：	MEMORY CIRCUIT	内存宽度：	8
湿度敏感等级：	3	功能数量：	1
端子数量：	8	字数：	32768 words
字数代码：	32000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	32KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
座面最大高度：	1.727 mm	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	3.898 mm
Base Number Matches：	1

FM24V02A-GTR 数据手册

FM24V02A

256-Kbit (32K × 8) Serial (I²C) F-RAM

256-Kbit (32K

× 8) Serial (I²C) F-RAM

Features

Functional Description

The FM24V02A is a 256-Kbit nonvolatile memory employing an

advanced ferroelectric process. An F-RAM is nonvolatile and

performs reads and writes similar to a RAM. It provides reliable

data retention for 151 years while eliminating the complexities,

overhead, and system-level reliability problems caused by

EEPROM and other nonvolatile memories.

■ 256-Kbit ferroelectric random access memory (F-RAM)

logically organized as 32K × 8

❐ High-endurance 100 trillion (10¹⁴) read/writes

❐ 151-year data retention (See the Data Retention and

Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

Unlike EEPROM, the FM24V02A performs write operations at

bus speed. No write delays are incurred. Data is written to the

memory array immediately after each byte is successfully

transferred to the device. The next bus cycle can commence

without the need for data polling. In addition, the product offers

substantial write endurance compared with other nonvolatile

memories. F-RAM also exhibits much lower power during writes

than EEPROM because write operations do not require an

internally elevated power supply voltage for write circuits. The

FM24V02A is capable of supporting 10¹⁴read/write cycles, or

100 million times more write cycles than EEPROM.

■ Fast two-wire serial interface (I²C)

❐ Up to 3.4-MHz frequency^[1]

❐ Direct hardware replacement for serial EEPROM

❐ Supports legacy timings for 100 kHz and 400 kHz

■ Device ID

❐ Manufacturer ID and Product ID

■ Low power consumption

❐ 175-A active current at 100 kHz

❐ 150-A standby current

These capabilities make the FM24V02A ideal for nonvolatile

memory applications, requiring frequent or rapid writes.

Examples range from data logging, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of EEPROM can cause data loss. The

combination of features allows more frequent data writing with

less overhead for the system.

❐ 8-A sleep mode current

■ Low-voltage operation: V_DD= 2.0 V to 3.6 V

■ Industrial temperature: –40 C to +85 C

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

The FM24V02A provides substantial benefits to users of serial

EEPROM as a hardware drop-in replacement. The device

incorporates a read-only Device ID that allows the host to

determine the manufacturer, product density, and product

revision. The device specifications are guaranteed over an

industrial temperature range of –40 C to +85 C.

For a complete list of related resources, click here.

Logic Block Diagram

32 K x 8

F-RAM Array

Address

Latch

Counter

Serial to Parallel

SDA

Data Latch

Converter

SCL

Device ID and

Manufacturer ID

Control Logic

A0-A2

Note

1. The FM24V02A does not meet the NXP I C specification in the Fast-mode Plus (Fm+, 1 MHz) for I and in the High Speed Mode (Hs-mode, 3.4 MHz) for V . Refer

hys

to the DC Electrical Characteristics table for more details.

Cypress Semiconductor Corporation

Document Number: 001-90839 Rev. *I

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised May 11, 2017

12 3 4 5 6 7...19

中文翻译

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FM24V02A-GTR 替代型号

型号	品牌	替代类型	描述	数据表
FM24V02A-G	CYPRESS	完全替代	Memory Circuit, 32KX8, CMOS, PDSO8, SOIC-8
FM24V02-GTR	CYPRESS	完全替代	256Kb Serial 3V F-RAM Memory

与FM24V02A-GTR相关器件

型号	品牌	获取价格	描述	数据表
FM24V02-G	CYPRESS	获取价格	256Kb Serial 3V F-RAM Memory
FM24V02-G	RAMTRON	获取价格	256Kb Serial 3V F-RAM Memory
FM24V02-GTR	RAMTRON	获取价格	256Kb Serial 3V F-RAM Memory
FM24V02-GTR	CYPRESS	获取价格	256Kb Serial 3V F-RAM Memory
FM24V05	RAMTRON	获取价格	512Kb Serial 3V F-RAM Memory
FM24V05_10	RAMTRON	获取价格	512Kb Serial 3V F-RAM Memory
FM24V05_13	CYPRESS	获取价格	512Kb Serial 3V F-RAM Memory
FM24V05-G	CYPRESS	获取价格	512Kb Serial 3V F-RAM Memory
FM24V05-G	RAMTRON	获取价格	512Kb Serial 3V F-RAM Memory
FM24V05-G	INFINEON	获取价格	铁电存储器 (F-RAM)

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