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FM24V01-G PDF预览

FM24V01-G

更新时间： 2024-11-12 20:20:51
品牌 Logo 应用领域
铁电 - RAMTRON PC静态存储器光电二极管内存集成电路
页数 文件大小 规格书
14页 372K
描述
Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

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中文翻译

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FM24V01-G 技术参数

是否Rohs认证：符合生命周期：Transferred
零件包装代码：SOIC包装说明：SOP, SOP8,.25
针数：8Reach Compliance Code：unknown
HTS代码：8542.32.00.71风险等级：5.63
Is Samacsys：NJESD-30 代码：R-PDSO-G8
长度：4.9 mm内存密度：131072 bit
内存集成电路类型：MEMORY CIRCUIT内存宽度：8
功能数量：1端子数量：8
字数：16384 words字数代码：16000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：16KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE电源：2.5/3.3 V
认证状态：Not Qualified座面最大高度：1.75 mm
最大待机电流：0.00015 A子类别：SRAMs
最大压摆率：0.001 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
宽度：3.9 mmBase Number Matches：1

FM24V01-G 数据手册

 浏览型号FM24V01-G的Datasheet PDF文件第2页浏览型号FM24V01-G的Datasheet PDF文件第3页浏览型号FM24V01-G的Datasheet PDF文件第4页浏览型号FM24V01-G的Datasheet PDF文件第5页浏览型号FM24V01-G的Datasheet PDF文件第6页浏览型号FM24V01-G的Datasheet PDF文件第7页 
FM24V01  
128Kb Serial 3V F-RAM Memory  
Features  
Device ID  
128K bit Ferroelectric Nonvolatile RAM  
Device ID reads out Manufacturer ID & Part ID  
Organized as 16,384 x 8 bits  
High Endurance 100 Trillion (1014) Read/Writes  
10 year Data Retention  
Low Voltage, Low Power Operation  
Low Voltage Operation 2.0V – 3.6V  
Active Current 90 A (typ. @ 100KHz)  
Standby Current 80 A (typ.)  
NoDelay™ Writes  
Advanced High-Reliability Ferroelectric Process  
Sleep Mode Current 4 A (typ.)  
Fast Two-wire Serial Interface  
Up to 3.4 MHz maximum bus frequency  
Direct hardware replacement for EEPROM  
Supports legacy timing for 100 kHz & 400 kHz  
Industry Standard Configuration  
Industrial Temperature -40C to +85C  
8-pin “Green”/RoHS SOIC Package  
a hardware drop-in replacement. The device is  
available in an industry standard 8-pin SOIC package  
using a familiar two-wire (I2C) protocol. The device  
incorporates a read-only Device ID that allows the  
host to determine the manufacturer, product density,  
and product revision. The device is guaranteed over  
an industrial temperature range of -40°C to +85°C.  
Description  
The FM24V01 is a 128Kbit nonvolatile memory  
employing an advanced ferroelectric process. A  
ferroelectric random access memory or F-RAM is  
nonvolatile and performs reads and writes like a  
RAM. It provides reliable data retention for 10 years  
while eliminating the complexities, overhead, and  
system level reliability problems caused by  
EEPROM and other nonvolatile memories.  
Pin Configuration  
The FM24V01 performs write operations at bus  
speed. No write delays are incurred. The next bus  
cycle may commence immediately without the need  
for data polling. In addition, the product offers write  
endurance orders of magnitude higher than  
EEPROM. Also, F-RAM exhibits much lower power  
during writes than EEPROM since write operations  
do not require an internally elevated power supply  
voltage for write circuits.  
1
2
3
4
8
7
6
5
VDD  
WP  
A0  
A1  
A2  
SCL  
SDA  
VSS  
Pin Name  
A0-A2  
SDA  
Function  
Device Select Address  
Serial Data/address  
Serial Clock  
Write Protect  
Supply Voltage  
Ground  
These capabilities make the FM24V01 ideal for  
nonvolatile memory applications requiring frequent  
or rapid writes. Examples range from data collection  
where the number of write cycles may be critical, to  
demanding industrial controls where the long write  
time of EEPROM can cause data loss. The  
combination of features allows more frequent data  
writing with less overhead for the system.  
SCL  
WP  
VDD  
VSS  
The FM24V01 provides substantial benefits to users  
of serial EEPROM, yet these benefits are available in  
This product conforms to specifications per the terms of the Ramtron  
standard warranty. The product has completed Ramtron’s internal  
qualification testing and has reached production status.  
Ramtron International Corporation  
1850 Ramtron Drive, Colorado Springs, CO 80921  
(800) 545-FRAM, (719) 481-7000  
http://www.ramtron.com  
Rev. 3.0  
Jan. 2012  
Page 1 of 14  
1234567...14

中文翻译

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FM24V01-G 替代型号

型号 品牌 替代类型 描述 数据表
FM24V01-GTR CYPRESS

功能相似

 128Kb Serial 3V F-RAM Memory

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FM24V01-GTR CYPRESS

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 		128Kb Serial 3V F-RAM Memory
FM24V01-GTR RAMTRON

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 		Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM24V02 CYPRESS

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 		256Kb Serial 3V F-RAM Memory
FM24V02 RAMTRON

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FM24V02_10 RAMTRON

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 		256Kb Serial 3V F-RAM Memory
FM24V02A-G CYPRESS

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 		Memory Circuit, 32KX8, CMOS, PDSO8, SOIC-8
FM24V02A-G INFINEON

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 		铁电存储器 (F-RAM)
FM24V02A-GTR CYPRESS

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 		Memory Circuit, 32KX8, CMOS, PDSO8, SOIC-8
FM24V02A-GTR INFINEON

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 		铁电存储器 (F-RAM)
FM24V02-G CYPRESS

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 		256Kb Serial 3V F-RAM Memory

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