FM24V01

更新时间： 2024-11-12 10:34:35

品牌	Logo	应用领域
铁电 - RAMTRON		存储
页数	文件大小	规格书
14页	315K
描述
128Kb Serial 3V F-RAM Memory

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中文翻译

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FM24V01 数据手册

Preliminary

FM24V01

128Kb Serial 3V F-RAM Memory

Features

Device ID

128K bit Ferroelectric Nonvolatile RAM



Device ID reads out Manufacturer ID & Part ID



Organized as 16,384 x 8 bits

High Endurance 100 Trillion (10¹⁴) Read/Writes

10 year Data Retention

Low Voltage, Low Power Operation



Low Voltage Operation 2.0V – 3.6V

Active Current 90 A (typ. @ 100KHz)

Standby Current 80 A (typ.)

NoDelay™ Writes

Advanced High-Reliability Ferroelectric Process

Sleep Mode Current 4 A (typ.)

Fast Two-wire Serial Interface



Up to 3.4 MHz maximum bus frequency

Direct hardware replacement for EEPROM

Supports legacy timing for 100 kHz & 400 kHz

Industry Standard Configuration



Industrial Temperature -40 C to +85 C

8-pin “Green”/RoHS SOIC Package

a hardware drop-in replacement. The device is

available in an industry standard 8-pin SOIC package

using a familiar two-wire (I²C) protocol. The device

incorporates a read-only Device ID that allows the

host to determine the manufacturer, product density,

and product revision. The device is guaranteed over

an industrial temperature range of -40°C to +85°C.

Description

The FM24V01 is a 128Kbit nonvolatile memory

employing an advanced ferroelectric process. A

ferroelectric random access memory or F-RAM is

nonvolatile and performs reads and writes like a

RAM. It provides reliable data retention for 10 years

while eliminating the complexities, overhead, and

system level reliability problems caused by

EEPROM and other nonvolatile memories.

Pin Configuration

The FM24V01 performs write operations at bus

speed. No write delays are incurred. The next bus

cycle may commence immediately without the need

for data polling. In addition, the product offers write

endurance orders of magnitude higher than

EEPROM. Also, F-RAM exhibits much lower power

during writes than EEPROM since write operations

do not require an internally elevated power supply

voltage for write circuits.

VDD

SCL

SDA

VSS

Pin Name

A0-A2

SDA

Function

Device Select Address

Serial Data/address

Serial Clock

Write Protect

Supply Voltage

Ground

These capabilities make the FM24V01 ideal for

nonvolatile memory applications requiring frequent

or rapid writes. Examples range from data collection

where the number of write cycles may be critical, to

demanding industrial controls where the long write

time of EEPROM can cause data loss. The

combination of features allows more frequent data

writing with less overhead for the system.

SCL

VDD

VSS

The FM24V01 provides substantial benefits to users

of serial EEPROM, yet these benefits are available in

This is a product that has fixed target specifications but are subject

to change pending characterization results.

Ramtron International Corporation

1850 Ramtron Drive, Colorado Springs, CO 80921

(800) 545-FRAM, (719) 481-7000

http://www.ramtron.com

Rev. 1.1

Sept. 2011

Page 1 of 14

12 3 4 5 6 7...14

中文翻译

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与FM24V01相关器件

型号	品牌	获取价格	描述	数据表
FM24V01_13	CYPRESS	获取价格	128Kb Serial 3V F-RAM Memory
FM24V01A	CYPRESS	获取价格	128-Kbit (16K Ã 8) Serial (I2C) F-RAM
FM24V01A-G	CYPRESS	获取价格	128-Kbit (16K Ã 8) Serial (I2C) F-RAM
FM24V01A-G	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24V01A-GTR	CYPRESS	获取价格	Memory Circuit, 16KX8, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, MS-012, SOIC-8
FM24V01A-GTR	INFINEON	获取价格	铁电存储器 (F-RAM)
FM24V01-G	CYPRESS	获取价格	128Kb Serial 3V F-RAM Memory
FM24V01-G	RAMTRON	获取价格	Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8
FM24V01-GTR	CYPRESS	获取价格	128Kb Serial 3V F-RAM Memory
FM24V01-GTR	RAMTRON	获取价格	Memory Circuit, 16KX8, CMOS, PDSO8, GREEN, MS-012AA, SOIC-8

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