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FJN3314RBU PDF预览

FJN3314RBU

更新时间: 2024-09-20 19:43:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
5页 163K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

FJN3314RBU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.39
其他特性:BUILT IN BIAS RESISTOR RATIO IS 10最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):68JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

FJN3314RBU 数据手册

 浏览型号FJN3314RBU的Datasheet PDF文件第2页浏览型号FJN3314RBU的Datasheet PDF文件第3页浏览型号FJN3314RBU的Datasheet PDF文件第4页浏览型号FJN3314RBU的Datasheet PDF文件第5页 
November 2013  
FJN3314R  
NPN Epitaxial Silicon Transistor with Bias Resistor  
Features  
Description  
• 100 mA Output Current Capability  
• Built-in Bias Resistor (R1 = 4.7 kΩ, R2 = 47 kΩ)  
Transistors with built-in resistors can be excellent  
space- and cost-saving solutions by reducing compo-  
nent count and simplifying circuit design.  
Application  
• Switching, Interface, and Driver Circuits  
• Inverters  
• Digital Applications in Industrial Segments  
Equivalent Circuit  
C
R1  
B
R2  
TO-92  
1
E
1. Emitter 2. Collector 3. Base  
Ordering Information  
Part Number  
Top Mark  
Package  
TO-92 3L  
Packing Method  
FJN3314RTA  
R3314  
Ammo  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
50  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
50  
V
10  
V
100  
mA  
°C  
°C  
TJ  
Junction Temperature  
Storage Temperature  
150  
TSTG  
-55 to 150  
© 2002 Fairchild Semiconductor Corporation  
FJN3314R Rev. 1.1.2  
www.fairchildsemi.com  
1

FJN3314RBU 替代型号

型号 品牌 替代类型 描述 数据表
FJN3314RTA FAIRCHILD

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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