FJN4306R

更新时间： 2024-11-07 22:31:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	70K
描述
PNP Epitaxial Silicon Transistor

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中文翻译

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数据手册

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FJN4306R 数据手册

FJN4306R

Switching Application ^{(Bias Resistor Built In)}

•

Switching circuit, Inverter, Interface circuit, Driver Circuit

Built in bias Resistor (R =10KΩ, R =47KΩ)

Complement to FJN3306R

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Equivalent Circuit

Symbol

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value

Units

-50

CBO

CEO

EBO

-50

-10

-100

300

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

-50

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

I = -10µA, I =0

CBO

CEO

I = -100µA, I =0

= -40V, I =0

-0.1

-0.3

µA

CBO

DC Current Gain

= -5V, I = -5mA

(sat)

Collector-Emitter Saturation Voltage

Output Capacitance

I = -10mA, I = -0.5mA

= -10V, I =0

5.5

f=1.0MHz

Current Gain Bandwidth Product

Input Off Voltage

= -10V, I = -5mA

200

MHz

V (off)

= -5V, I = -100µA

-0.3

V (on)

Input On Voltage

= -0.3V, I = -1mA

-1.4

Input Resistor

KΩ

R /R

Resistor Ratio

0.19

0.21

0.24

Rev. A, July 2002

12 3 4

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