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FJN5471TA PDF预览

FJN5471TA

更新时间: 2024-11-08 21:18:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
6页 91K
描述
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

FJN5471TA 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.53最大集电极电流 (IC):5 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):700JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):0.75 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

FJN5471TA 数据手册

 浏览型号FJN5471TA的Datasheet PDF文件第2页浏览型号FJN5471TA的Datasheet PDF文件第3页浏览型号FJN5471TA的Datasheet PDF文件第4页浏览型号FJN5471TA的Datasheet PDF文件第5页浏览型号FJN5471TA的Datasheet PDF文件第6页 
FJN5471  
For Output Amplifier of Electronic Flash Unit  
High DC Currrent Gain  
Low Collector-Emitter Saturation Voltage  
High Performance at Low Supply Voltage  
TO-92  
1. Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
40  
CBO  
20  
V
CEO  
EBO  
7
5
V
I
A
C
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
0.75  
W
C
T
T
150  
°C  
°C  
J
-55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Emitter Voltage  
Emitter Base Voltage  
Test Condition  
Min.  
20  
7
Typ.  
Max.  
Units  
BV  
I =1mA, I =0  
V
V
CEO  
EBO  
C
B
BV  
I =100µA, I =0  
C C  
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
V
=10V, I =0  
0.1  
0.1  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
V
V
=7V, I =0  
C
h
DC Current Gain  
=2V, I =0.5A  
700  
1000  
FE  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current Gain Band Width Product  
Collector Output Capacitance  
I =3A, I =0.1A  
0.5  
1.5  
V
V
CE  
C
B
I =3A, I =0.1A  
BE  
C
B
f
V
=6V, I =50mA  
150  
25  
MHz  
pF  
T
CE  
CB  
C
C
V
=20V, I =0, f=1MHz  
E
ob  
Thermal Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Max  
165  
Units  
°C/W  
R
Thermal Resistance, Junction to Ambient  
θjA  
©2002 Fairchild Semiconductor Corporation  
Rev. A1, August 2002  

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