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FJN598JJ05Z PDF预览

FJN598JJ05Z

更新时间: 2024-11-05 15:32:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
7页 117K
描述
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, 3 PIN

FJN598JJ05Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
配置:SINGLE最大漏极电流 (ID):0.001 A
FET 技术:JUNCTIONJESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:DEPLETION MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

FJN598JJ05Z 数据手册

 浏览型号FJN598JJ05Z的Datasheet PDF文件第2页浏览型号FJN598JJ05Z的Datasheet PDF文件第3页浏览型号FJN598JJ05Z的Datasheet PDF文件第4页浏览型号FJN598JJ05Z的Datasheet PDF文件第5页浏览型号FJN598JJ05Z的Datasheet PDF文件第6页浏览型号FJN598JJ05Z的Datasheet PDF文件第7页 
FJN598J  
Capacitor Microphone Applications  
Especially Suited for use in Audio, Telephone Capacitor Microphones  
Excellent Voltage Characteristic  
Excellent Transient Characteristic  
TO-92  
1. Source 2. Gate 3. Drain  
1
Si N-channel Junction FET  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-20  
Units  
V
Gate-Drain Voltage  
Gate Current  
V
GDO  
I
I
10  
mA  
mA  
mW  
°C  
G
Drain Current  
1
D
P
Power Dissipation  
Junction Temperature  
Storage Temperature  
150  
D
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Gate-Drain Breakdown Voltage  
Gate-Source Cut-off Voltage  
Drain Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
I = -100uA  
-20  
V
GDO  
G
V
(off)  
V
=5V, I =1µA  
-0.6  
-1.5  
800  
V
GS  
DS  
DS  
DS  
DS  
DS  
D
I
V
V
V
V
=5V, V =0  
100  
0.4  
µA  
ms  
pF  
pF  
DSS  
GS  
lY  
l
Forward Transfer Admittance  
Input Capacitance  
=5V, V =0, f=1MHz  
1.2  
3.5  
FS  
GS  
C
C
=5V, V =0, f=1MHz  
GS  
ISS  
Output Capacitance  
=5V, V =0, f=1MHz  
0.65  
RSS  
GS  
I
Classification  
DSS  
Classification  
A
B
C
D
E
I
(µA)  
100 ~ 170  
150 ~ 240  
210 ~ 350  
320 ~ 480  
440 ~ 800  
DSS  
©2000 Fairchild Semiconductor International  
Rev. A. June 2000  

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