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FJN965J05Z PDF预览

FJN965J05Z

更新时间: 2024-11-08 14:50:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
6页 57K
描述
Small Signal Bipolar Transistor, 5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

FJN965J05Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.77
最大集电极电流 (IC):5 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):150
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

FJN965J05Z 数据手册

 浏览型号FJN965J05Z的Datasheet PDF文件第2页浏览型号FJN965J05Z的Datasheet PDF文件第3页浏览型号FJN965J05Z的Datasheet PDF文件第4页浏览型号FJN965J05Z的Datasheet PDF文件第5页浏览型号FJN965J05Z的Datasheet PDF文件第6页 
FJN965  
For Output Amplifier of Electronic Flash Unit  
Low Collector-Emitter Saturation Voltage  
High Performance at Low Supply Voltage  
TO-92  
1. Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
40  
CBO  
20  
V
CEO  
EBO  
7
5
V
I
A
C
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
0.75  
W
C
T
T
150  
°C  
°C  
J
-55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Emitter Voltage  
Emitter Base Voltage  
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
20  
7
Typ.  
Max.  
Units  
BV  
I =1mA, I =0  
V
CEO  
EBO  
C
B
BV  
I =10µA, I =0  
V
C
C
I
I
I
V
=10V, I =0  
0.1  
1
µA  
µA  
µA  
CBO  
CB  
CE  
EB  
E
V
V
=10V, I =0  
B
CEO  
EBO  
=7V, I =0  
0.1  
600  
C
h
h
V
V
=2V, I =0.5A  
230  
150  
FE1  
FE2  
CE  
CE  
C
=2V, I =2A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Band Width Product  
Output Capacitance  
I =3A, I =0.1A  
1
V
CE  
C
B
f
V
=6V, I =50mA  
150  
MHz  
pF  
T
CE  
CB  
C
C
V
=20V, I =0, f=1MHz  
50  
ob  
E
©2000 Fairchild Semiconductor International  
Rev. A. June 2000  

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