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FJNS3209RBU PDF预览

FJNS3209RBU

更新时间: 2024-11-08 13:07:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管开关
页数 文件大小 规格书
4页 34K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S, 3 PIN

FJNS3209RBU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-92S包装说明:TO-92S, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.84其他特性:BUILT IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:40 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

FJNS3209RBU 数据手册

 浏览型号FJNS3209RBU的Datasheet PDF文件第2页浏览型号FJNS3209RBU的Datasheet PDF文件第3页浏览型号FJNS3209RBU的Datasheet PDF文件第4页 
FJNS3209R  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R=4.7K)  
Complement to FJNS4209R  
TO-92S  
1
1.Emitter 2. Collector 3. Base  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Equivalent Circuit  
C
Symbol  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Value  
Units  
V
40  
V
CBO  
CEO  
EBO  
V
V
40  
V
5
V
R
B
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
300  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
E
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
40  
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I =100µA, I =0  
CBO  
CEO  
C
E
BV  
I =1mA, I =0  
40  
V
E
B
I
V
=30V, I =0  
0.1  
600  
0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=5V, I =1mA  
100  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I =10mA, I =1mA  
V
CE  
C
B
C
V
=10V, I =0  
3.70  
pF  
ob  
CB  
E
f=1MHz  
f
Current Gain Bandwidth Product  
Input Resistor  
V
=10V, I =5mA  
250  
4.7  
MHz  
T
CE  
C
R
3.2  
6.2  
KΩ  
©2002 Fairchild Semiconductor Corporation  
Rev. A, August 2002  

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