Datasheet > FJNS3213R

FJNS3213R

更新时间： 2024-11-09 22:32:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
3页	29K
描述
NPN Epitaxial Silicon Transistor

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FJNS3213R 数据手册

FJNS3213R

Switching Application ^{(Bias Resistor Built In)}

•

Switching circuit, Inverter, Interface circuit, Driver Circuit

Built in bias Resistor (R =2.2KΩ, R =47KΩ)

Complement to FJNS4213R

TO-92S

1.Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Equivalent Circuit

Symbol

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value

Units

CBO

CEO

EBO

100

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

300

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

I =10µA, I =0

CBO

CEO

I =100µA, I =0

=40V, I =0

0.1

0.3

µA

CBO

DC Current Gain

=5V, I =5mA

(sat)

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

I =10mA, I =0.5mA

=10V, I =5mA

250

3.7

MHz

=10V, I =0

f=1.0MHz

V (off)

Input Off Voltage

Input On Voltage

Input Resistor

=5V, I =100µA

0.5

V (on)

=0.2V, I =5mA

1.1

2.9

1.5

2.2

KΩ

R /R

Resistor Ratio

0.042

0.047

0.052

Rev. A, August 2002

12 3

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