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FJNS3211R PDF预览

FJNS3211R

更新时间: 2024-11-07 22:32:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
3页 28K
描述
NPN Epitaxial Silicon Transistor

FJNS3211R 数据手册

 浏览型号FJNS3211R的Datasheet PDF文件第2页浏览型号FJNS3211R的Datasheet PDF文件第3页 
FJNS3211R  
Switching Application (Bias Resistor Built In)  
Switching circuit, Inverter, Interface circuit, Driver Circuit  
Built in bias Resistor (R=22K)  
Complement to FJNS4211R  
TO-92S  
1
1.Emitter 2. Collector 3. Base  
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Equivalent Circuit  
C
Symbol  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Value  
Units  
V
40  
V
CBO  
CEO  
EBO  
V
V
40  
V
R
5
V
B
I
100  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
300  
C
T
T
150  
J
E
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
40  
Typ.  
Max.  
Units  
V
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I =100µA, I =0  
CBO  
CEO  
C
E
BV  
I =1mA, I =0  
40  
V
E
B
I
V
=30V, I =0  
0.1  
600  
0.3  
µA  
CBO  
CB  
CE  
E
h
DC Current Gain  
V
=5V, I =1mA  
100  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Output Capacitance  
I =10mA, I =1mA  
V
CE  
C
B
C
V
=10V, I =0  
3.7  
pF  
ob  
CB  
E
f=1MHz  
f
Current Gain Bandwidth Product  
Input Resistor  
V
=10V, I =5mA  
250  
22  
MHz  
T
CE  
C
R
15  
29  
KΩ  
©2002 Fairchild Semiconductor Corporation  
Rev. A, August 2002  

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