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FJN598JC PDF预览

FJN598JC

更新时间: 2024-09-19 22:25:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管放大器
页数 文件大小 规格书
5页 52K
描述
Capacitor Microphone Applications

FJN598JC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.92Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR最大漏极电流 (ID):0.001 A
FET 技术:JUNCTIONJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

FJN598JC 数据手册

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FJN598J  
Capacitor Microphone Applications  
Especially Suited for use in Audio, Telephone Capacitor Microphones  
Excellent Voltage Characteristic  
Excellent Transient Characteristic  
TO-92  
1. Source 2. Gate 3. Drain  
1
Si N-channel Junction FET  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-20  
Units  
V
Gate-Drain Voltage  
Gate Current  
V
GDO  
I
I
10  
mA  
mA  
mW  
°C  
G
Drain Current  
1
D
P
Power Dissipation  
Junction Temperature  
Storage Temperature  
150  
D
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Gate-Drain Breakdown Voltage  
Gate-Source Cut-off Voltage  
Drain Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
I = -100uA  
-20  
V
GDO  
G
V
(off)  
V
=5V, I =1µA  
-0.6  
-1.5  
350  
V
GS  
DS  
DS  
DS  
DS  
DS  
D
I
V
V
V
V
=5V, V =0  
100  
0.4  
µA  
ms  
pF  
pF  
DSS  
GS  
lY  
l
Forward Transfer Admittance  
Input Capacitance  
=5V, V =0, f=1MHz  
1.2  
3.5  
FS  
GS  
C
C
=5V, V =0, f=1MHz  
GS  
ISS  
Output Capacitance  
=5V, V =0, f=1MHz  
0.65  
RSS  
GS  
I
Classification  
DSS  
Classification  
A
B
C
I
(µA)  
100 ~ 170  
150 ~ 240  
210 ~ 350  
DSS  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, November 2002  

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