Datasheet > FJN598JDD26Z

FJN598JDD26Z

更新时间： 2024-09-21 07:45:43

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	117K
描述
Small Signal Field-Effect Transistor, 0.001A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92

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FJN598JDD26Z 数据手册

FJN598J

Capacitor Microphone Applications

•

Especially Suited for use in Audio, Telephone Capacitor Microphones

Excellent Voltage Characteristic

Excellent Transient Characteristic

TO-92

1. Source 2. Gate 3. Drain

Si N-channel Junction FET

Absolute Maximum Ratings _{T =25°C}unless otherwise noted

ꢀ

Symbol

Parameter

Ratings

-20

Units

Gate-Drain Voltage

Gate Current

GDO

°C

Drain Current

Power Dissipation

Junction Temperature

Storage Temperature

150

-55 ~ 150

°C

STG

Electrical Characteristics _{T =25°C}unless otherwise noted

ꢀ

Symbol

Parameter

Gate-Drain Breakdown Voltage

Gate-Source Cut-off Voltage

Drain Current

Test Condition

Min.

Typ.

Max.

Units

I = -100uA

-20

GDO

(off)

=5V, I =1µA

-0.6

-1.5

800

=5V, V =0

100

0.4

µA

DSS

Forward Transfer Admittance

Input Capacitance

=5V, V =0, f=1MHz

1.2

3.5

=5V, V =0, f=1MHz

ISS

Output Capacitance

=5V, V =0, f=1MHz

0.65

RSS

Classification

DSS

Classification

(µA)

100 ~ 170

150 ~ 240

210 ~ 350

320 ~ 480

440 ~ 800

DSS

Rev. A. June 2000

12 3 4 5 6 7

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