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FJC1963S PDF预览

FJC1963S

更新时间: 2024-10-28 12:59:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管放大器
页数 文件大小 规格书
4页 51K
描述
Small Signal Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

FJC1963S 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOT-89包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.81Is Samacsys:N
最大集电极电流 (IC):3 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):280
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

FJC1963S 数据手册

 浏览型号FJC1963S的Datasheet PDF文件第1页浏览型号FJC1963S的Datasheet PDF文件第3页浏览型号FJC1963S的Datasheet PDF文件第4页 
Typical Characteristics  
1400  
1200  
1000  
800  
600  
400  
200  
0
1000  
100  
10  
IB = 7mA  
VCE = 2V  
IB = 6mA  
IB = 5mA  
Ta = 125oC  
Ta = 25oC  
IB = 4mA  
IB = 3mA  
IB = 2mA  
Ta = - 40oC  
IB = 1mA  
0
2
4
6
8
10  
12  
14  
10m  
100m  
1
10  
IC [A], COLLECTOR CURRENT  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
10  
10  
IC = 10IB  
IC = 10IB  
1
Ta = 125oC  
100m  
10m  
1m  
1
Ta = - 40oC  
Ta = 25oC  
Ta = 25oC  
Ta = 125oC  
Ta = - 40oC  
100m  
10m  
10m  
100m  
1
10  
100m  
1
10  
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 3. Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter Saturation Voltage  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.8  
VCE = 2V  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
125oC  
25oC  
- 40oC  
0.2  
0.0  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
25  
50  
75  
100  
125  
150  
175  
VBE [V], BASE-EMITTER VOLTAGE  
Ta [oC], AMIBIENT TEMPERATURE  
Figure 5. Base-Emitter On Voltage  
Figure 6. Power Derating  
©2002 Fairchild Semiconductor Corporation  
Rev. A1, August 2002  

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