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FGP5N60UFD PDF预览

FGP5N60UFD

更新时间: 2024-11-01 10:32:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
10页 706K
描述
600V, 5A Field Stop IGBT

FGP5N60UFD 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N最大集电极电流 (IC):10 A
集电极-发射极最大电压:600 V配置:SINGLE WITH BUILT-IN DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):78 ns
标称接通时间 (ton):19 nsBase Number Matches:1

FGP5N60UFD 数据手册

 浏览型号FGP5N60UFD的Datasheet PDF文件第2页浏览型号FGP5N60UFD的Datasheet PDF文件第3页浏览型号FGP5N60UFD的Datasheet PDF文件第4页浏览型号FGP5N60UFD的Datasheet PDF文件第5页浏览型号FGP5N60UFD的Datasheet PDF文件第6页浏览型号FGP5N60UFD的Datasheet PDF文件第7页 
October 2008  
FGP5N60UFD  
tm  
600V, 5A Field Stop IGBT  
Features  
General Description  
High current capability  
Using Novel Field Stop IGBT Technology, Fairchild’s new series  
of Field Stop IGBTs offer the optimum performance for Induction  
Heating, UPS, SMPS, and PFC applications where low conduc-  
tion and switching losses are essential.  
Low saturation voltage: VCE(sat) =1.9V @ IC = 5A  
High input impedance  
Fast switching  
RoHS compliant  
Applications  
Induction Heating, UPS, SMPS, PFS  
C
G
TO-220  
1.Gate 2.Collector 3.Emitter  
1
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
Units  
VCES  
VGES  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
Collector Current  
600  
± 20  
10  
V
V
A
A
A
@ TC = 25oC  
@ TC = 100oC  
IC  
ICM (1)  
PD  
Collector Current  
5
@ TC = 25oC  
@ TC = 25oC  
@ TC = 100oC  
Pulsed Collector Current  
15  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
81  
W
W
oC  
oC  
32  
TJ  
-55 to +150  
-55 to +150  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1: Repetitive rating: Pulse width limited by max. juntion temperature  
Thermal Characteristics  
Symbol  
RθJC(IGBT)  
RθJC(Diode)  
RθJA  
Parameter  
Typ.  
Max.  
1.55  
3.2  
Units  
oC/W  
oC/W  
oC/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
-
-
-
62.5  
©2008 Fairchild Semiconductor Corporation  
FGP5N60UFD Rev. A  
1
www.fairchildsemi.com  

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