Datasheet > FGPF10N60UNDF

FGPF10N60UNDF

更新时间： 2024-11-20 11:13:51

品牌	Logo	应用领域
安森美 - ONSEMI		局域网电动机控制栅双极性晶体管
页数	文件大小	规格书
11页	382K
描述
IGBT，600V，10A，短路额定

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技术参数
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FGPF10N60UNDF 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	5 weeks	风险等级：	0.82
Is Samacsys：	N	外壳连接：	ISOLATED
最大集电极电流 (IC)：	20 A	集电极-发射极最大电压：	600 V
配置：	SINGLE WITH BUILT-IN DIODE	最大降落时间（tf）：	24.8 ns
门极发射器阈值电压最大值：	8.5 V	门极-发射极最大电压：	20 V
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	42 W
子类别：	Insulated Gate BIP Transistors	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	MOTOR CONTROL	晶体管元件材料：	SILICON
标称断开时间 (toff)：	89.3 ns	标称接通时间 (ton)：	15.4 ns
Base Number Matches：	1

FGPF10N60UNDF 数据手册

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与FGPF10N60UNDF相关器件

型号	品牌	获取价格	描述	数据表
FGPF120N30	FAIRCHILD	获取价格	300V, 120A PDP IGBT
FGPF120N30TU	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 120A I(C), 300V V(BR)CES, N-Channel, TO-220AB, LEAD FRE
FGPF15N60UNDF	FAIRCHILD	获取价格	600V, 15A Short Circuit Rated IGBT
FGPF15N60UNDF	ONSEMI	获取价格	600V，15A，短路额定IGBT
FGPF30N30	FAIRCHILD	获取价格	300V, 30A PDP IGBT
FGPF30N30D	FAIRCHILD	获取价格	300V, 30A PDP IGBT
FGPF30N30TDTU	ROCHESTER	获取价格	300V, N-CHANNEL IGBT, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
FGPF30N45T	FAIRCHILD	获取价格	450V, 30A PDP Trench IGBT
FGPF30N45TTU	ROCHESTER	获取价格	450V, N-CHANNEL IGBT, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN
FGPF4533	FAIRCHILD	获取价格	330V, PDP IGBT

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