是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-247 | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.69 | 其他特性: | LOW CONDUCTION LOSS |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 75 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
最大降落时间(tf): | 105 ns | 门极发射器阈值电压最大值: | 5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT APPLICABLE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 290 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 153 ns | 标称接通时间 (ton): | 32 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRG4PC40WPBF | INFINEON |
功能相似 |
INSULATED GATE BIPOLAR TRANSISTOR | |
IRG4PC40UDPBF | INFINEON |
功能相似 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IGW40T120 | INFINEON |
功能相似 |
Low Loss IGBT in Trench and Fieldstop technology |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FGH40N6S2D | FAIRCHILD |
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600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode | |
FGH40N6S2D_NL | FAIRCHILD |
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Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, LEAD FREE P | |
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FGH40T100SMD | FAIRCHILD |
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IGBT,1000 V,40A,场截止沟槽 | |
FGH40T120SMD | MICROSS |
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Insulated Gate Bipolar Transistor | |
FGH40T120SMD | ONSEMI |
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IGBT,1200V,40A,场截止沟槽 | |
FGH40T120SMD_F155 | FAIRCHILD |
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FGH40T120SMD-F155 | ONSEMI |
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IGBT,1200V,40A,场截止沟槽 | |
FGH40T120SMDL4 | ONSEMI |
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IGBT,1200V,25A,FS 沟槽 |