是否无铅: | 不含铅 | 生命周期: | Not Recommended |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 5 weeks | 风险等级: | 7.09 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 80 A |
集电极-发射极最大电压: | 650 V | 配置: | SINGLE WITH BUILT-IN DIODE |
最大降落时间(tf): | 22 ns | 门极发射器阈值电压最大值: | 7.5 V |
门极-发射极最大电压: | 20 V | JEDEC-95代码: | TO-247AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 268 W | 最大上升时间(tr): | 34 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 213 ns | 标称接通时间 (ton): | 57 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FGH40T65UQDF-F155 | ONSEMI |
获取价格 |
IGBT,650 V,40A,场截止沟槽 | |
FGH40T70SHD | FAIRCHILD |
获取价格 |
700 V, 40 A Field Stop Trench IGBT | |
FGH40T70SHD_F155 | FAIRCHILD |
获取价格 |
700 V, 40 A Field Stop Trench IGBT | |
FGH40T70SHD-F155 | ONSEMI |
获取价格 |
IGBT,700 V,40A,场截止沟槽 | |
FGH4L40T120LQD | ONSEMI |
获取价格 |
IGBT, 1200V, 40A, Ultra Field Stop, Fast-switching Co-packed Diode. | |
FGH4L50T65MQDC50 | ONSEMI |
获取价格 |
650V Field stop 4th generation mid speed IGBT with co-pack SiC diode | |
FGH4L50T65SQD | ONSEMI |
获取价格 |
IGBT - 650 V 50 A FS4 high speed IGBT with copack diode | |
FGH4L75T65MQDC50 | ONSEMI |
获取价格 |
650V Field stop 4th generation mid speed IGBT | |
FGH50N3 | FAIRCHILD |
获取价格 |
300V, PT N-Channel IGBT | |
FGH50N3 | ONSEMI |
获取价格 |
IGBT,300 V,SMPS |