Datasheet > FGH4L75T65MQDC50

FGH4L75T65MQDC50

更新时间： 2024-10-02 11:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		双极性晶体管
页数	文件大小	规格书
9页	310K
描述
650V Field stop 4th generation mid speed IGBT with co-pack SiC diode

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中文翻译

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数据手册

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FGH4L75T65MQDC50 数据手册

DATA SHEET

www.onsemi.com

IGBT - Power, Co-PAK

N-Channel, Field Stop IV, MQ

(Medium Speed), TO247-4L

650 V, 1.45 V, 75 A

CES

CE(sat)

650 V

1.45 V

75 A

PIN CONNECTIONS

FGH4L75T65MQDC50

E1: Kelvin Emitter

E2: Power Emitter

Using the novel field stop 4th generation IGBT technology and

generation 1.5 SiC Schottky Diode technology in TO−247 4−lead

package, FGH4L75T65MQDC50 offers the optimum performance

with both low conduction and switching losses for high−efficiency

operations in various applications, especially totem pole bridgeless

PFC and Inverter.

Features

• Positive Temperature Coefficient for Easy Parallel Operation

• High Current Capability

• 100% of the Parts are Tested for I (Note 2)

• Smooth and Optimized Switching

• Low Saturation Voltage: V

= 1.45 V (Typ.) @ I = 75 A

CE(Sat)

TO−247−4LD

CASE 340CJ

• No Reverse Recovery / No Forward Recovery

• Tight Parameter Distribution

• RoHS Compliant

MARKING DIAGRAM

Applications

• Charging Station (EVSE)

• UPS, ESS

• Solar Inverter

• PFC, Converters

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Collector−to−Emitter Voltage

Gate−to−Emitter Voltage

Symbol Value

Unit

$Y&Z&3&K

G75T65

MQDC50

650

CES

GES

Transient Gate−to−Emitter Voltage

(t < 0.5 ms, D < 0.001)

Collector Current

= 25°C (Note 1)

110

= 100°C

= 25°C

Power Dissipation

385

192

300

= 100°C

= onsemi Logo

Pulsed Collector Current

Diode Forward Current

= 25°C (Note 2)

= 25°C (Note 3)

25°C (Note 1)

= Assembly Plant Code

= 3−Digit Date Code

= 2−Digit Lot Traceability Code

C =

G75T65MQDC50 = Specific Device Code

100°C

25°C

C =

Pulsed Diode Maximum

Forward Current

200

C =

ORDERING INFORMATION

Operating Junction and Storage Temperature

Range

T ,

STG

−55 to

°C

+175

Device

Package

Shipping

Maximum Lead Temperature for Soldering

Purposes

260

FGH4L75T65MQDC50 TO−247 30 Units / Tube

−4LD

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Value limit by bond wire

2. V = 400 V, V = 15 V, I = 300 A, Inductive Load, 100% tested

3. Repetitive rating: pulse width limited by max. junction temperature

Publication Order Number:

FGH4L75T65MQDC50/D

October, 2022 − Rev. 0

12 3 4 5 6 7...9

中文翻译

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与FGH4L75T65MQDC50相关器件

型号	品牌	获取价格	描述	数据表
FGH50N3	FAIRCHILD	获取价格	300V, PT N-Channel IGBT
FGH50N3	ONSEMI	获取价格	IGBT，300 V，SMPS
FGH50N6S2	FAIRCHILD	获取价格	600V, SMPS II Series N-Channel IGBT
FGH50N6S2_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 P
FGH50N6S2D	FAIRCHILD	获取价格	600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
FGH50N6S2D	ONSEMI	获取价格	600V，SMPS II IGBT
FGH50N6S2D_NL	FAIRCHILD	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247
FGH50T65SQD-F155	ONSEMI	获取价格	IGBT，650V，50A，场截止 4 沟槽
FGH50T65UPD	FAIRCHILD	获取价格	650 V, 50 A Field Stop Trench IGBT
FGH50T65UPD	ONSEMI	获取价格	650V，50A，场截止沟槽 IGBT

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