July 2002
FGH40N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
Features
The FGH40N6S2D is a Low Gate Charge, Low Plateau
Voltage SMPS II IGBT combining the fast switching speed
of the SMPS IGBTs along with lower gate charge, plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high volt-
age switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially de-
signed for:
• 100kHz Operation at 390V, 24A
• 200kHZ Operation at 390V, 18A
• 600V Switching SOA Capability
o
• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125 C
• Low Gate Charge . . . . . . . . . 35nC at V = 15V
GE
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ
• Low Conduction Loss
•
•
•
•
•
•
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
IGBT (co-pack) formerly Developmental Type TA49340
Diode formerly Developmental Type TA49391
JEDEC STYLE TO-247
Package
Symbol
E
C
C
G
G
COLLECTOR
(BOTTOM SIDE
METAL)
E
Device Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
BV
Parameter
Collector to Emitter Breakdown Voltage
Collector Current Continuous, T = 25°C
Ratings
600
Units
V
A
A
A
V
V
CES
I
75
C25
C
I
Collector Current Continuous, T = 110°C
35
C110
C
I
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
180
CM
V
±20
GES
GEM
V
±30
SSOA
Switching Safe Operating Area at T = 150°C, Figure 2
100A at 600V
260
J
E
Pulsed Avalanche Energy, I = 30A, L = 1mH, V = 50V
mJ
W
AS
CE
DD
P
Power Dissipation Total T = 25°C
290
D
C
Power Dissipation Derating T > 25°C
2.33
W/°C
°C
C
T
Operating Junction Temperature Range
Storage Junction Temperature Range
-55 to 150
-55 to 150
J
T
°C
STG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2002 Fairchild Semiconductor Corporation
FGH40N6S2D RevA4